Abstract
Transmission electron microscopy (TEM) and KOH etching have been used to study the dislocation structure of 4H SiC wafers grown by physical vapor transport. A new type of threading dislocation arrays was observed. Rows of etch pits corresponding to dislocation arrays were observed in vicinity of micropipes, misoriented grains and polytypic inclusions at the periphery of the boules and extended along the \( < 11\bar 20 > \) directions. Plan view conventional and high resolution TEM showed that the arrays consisted of dislocations threading along the c-axis with Burgers vectors having edge components of the a/3\( < 11\bar 20 > \) type. The Burgers vectors were parallel to the corresponding arrays. The dislocation arrays were interpreted as slip bands formed by dislocation glide in the prismatic slip system \( < 11\bar 20 > \) \(\{ \bar 1100\} \) of hexagonal SiC during post-growth cooling.
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Ha, S., Nuhfer, N.T., Rohrer, G.S. et al. Identification of prismatic slip bands in 4H SiC boules grown by physical vapor transport. J. Electron. Mater. 29, L5–L8 (2000). https://doi.org/10.1007/s11664-000-0194-1
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DOI: https://doi.org/10.1007/s11664-000-0194-1