Abstract
In this paper, we describe the change in barrier heights (ϕB) and ideality factors (n) of Ni/Au contacts to p-GaN determined from current-voltage measurements as a result of (a) rapid thermal annealing between 400–700°C under flowing nitrogen, and (b) testing at temperatures of 20–300°C. The lowest barrier height and ideality factor values were obtained from samples annealed at 500–600°C. These results provide supporting evidence that thermal processing helps to remove contaminants at the contact-GaN interface, thus decreasing effective barrier height and consequently, contact resistance.
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In the HSPICE simulation of the I–V data, we have used ϕb of 0.5 eV, n of 1, and ρs between 2.5 × 104Θ to 1.25 × 105Θ. We have further assumed that the reverse bias I–V of the metal-semiconductor contact can be modeled as a Schottky diode with barrier height of 0.5 eV (symmetry I–V property). The values of LT are estimated from HSPICE itself.
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Hibbard, D.L., Chuang, R.W., Zhao, Y.S. et al. Thermally induced variation in barrier height and ideality factor of Ni/Au contacts to p-GaN. J. Electron. Mater. 29, 291–296 (2000). https://doi.org/10.1007/s11664-000-0065-9
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DOI: https://doi.org/10.1007/s11664-000-0065-9