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Boron removal by titanium addition in solidification refining of silicon with Si-Al melt

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Abstract

In order to effectively remove B from Si for its use in solar cells, a process involving B removal by solidification refining of Si using a Si-Al melt with Ti addition was investigated. For clarifying the effect of Ti addition on B removal from the Si-Al melt, TiB2 solubilities in Si-64.6 at. pct Al melt at 1173 K and Si-60.0 at. pct Al melt at 1273 K were determined by measuring the equilibrium concentrations of B and Ti in the presence of TiB2 precipitates. The small solubilities of TiB2 in the Si-Al melt indicate the effective removal of B from the Si-Al melt by Ti addition. Further, solidification experiments of Si-Al alloys containing B by Ti addition were performed, and the effect of Ti addition on the solidification refining of Si with the Si-Al melt was successfully confirmed.

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Author notes

  1. Kentaro Arimura (Undergraduate Student)

    Present address: Department of Materials Engineering, The University of Tokyo, 113-8656, Tokyo, Japan

Authors and Affiliations

  1. Department of Materials Engineering, The University of Tokyo, 113-8656, Tokyo, Japan

    Takeshi Yoshikawa (Graduate Student, Research Associate) & Kazuki Morita (Associate Professor)

  2. Daiwa Securities Co. Ltd., 100-8101, Tokyo, Japan

    Kentaro Arimura (Undergraduate Student)

Authors
  1. Takeshi Yoshikawa
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  2. Kentaro Arimura
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  3. Kazuki Morita
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Yoshikawa, T., Arimura, K. & Morita, K. Boron removal by titanium addition in solidification refining of silicon with Si-Al melt. Metall Mater Trans B 36, 837–842 (2005). https://doi.org/10.1007/s11663-005-0085-1

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  • DOI: https://doi.org/10.1007/s11663-005-0085-1

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