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Effect of Si on the Growth Behavior of the Fe2Al5 Phase at Al-xSi(liquid)/Fe(solid) Interface During Holding by In-Situ Synchrotron Radiography

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Abstract

Effect of Si on the growth behavior of the Fe2Al5 phase formed at the Al-xSi(liquid)/Fe(solid) interface during holding was investigated by a synchrotron radiation real-time imaging technique. Results show that growth of the Fe2Al5 phase is accompanied by its simultaneous dissolution into the melt. Addition of Si inhibits the growth of Fe2Al5 to reduce its thickness and change its morphology. The growth and dissolution kinetics of the Fe2Al5 phase are discussed.

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This work is supported by the National Natural Science Foundation of China-Excellent Young Scholars (51922068), National Key Research and Development Program (2017YFA0403800), and National Natural Science Foundation of China (51727802, 51821001, 51904186, 51904187). The support of synchrotron radiation phase-contrast imaging by the BL13W1 beam line of Shanghai Synchrotron Radiation Facility (SSRF), China, is gratefully acknowledged.

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Authors and Affiliations

  1. Shanghai Key Laboratory of Materials Laser Processing and Modification, School of Materials Science and Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. China

    Naifang Zhang, Qiaodan Hu, Wenquan Lu, Zongye Ding, Liao Yu, Xuan Ge & Jianguo Li

  2. School of Mechanical Engineering, Shanghai Jiao Tong University, Shanghai, 200240, P.R. China

    Fan Yang

  3. School of Materials, The University of Manchester, Oxford Road, Manchester, M13 9PL, UK

    Sheng Cao

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  1. Naifang Zhang
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  2. Qiaodan Hu
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  3. Fan Yang
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  4. Wenquan Lu
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  5. Zongye Ding
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  7. Liao Yu
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  8. Xuan Ge
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  9. Jianguo Li
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Correspondence to Qiaodan Hu or Fan Yang.

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Manuscript submitted December 21, 2019.

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Zhang, N., Hu, Q., Yang, F. et al. Effect of Si on the Growth Behavior of the Fe2Al5 Phase at Al-xSi(liquid)/Fe(solid) Interface During Holding by In-Situ Synchrotron Radiography. Metall Mater Trans A 51, 2711–2718 (2020). https://doi.org/10.1007/s11661-020-05754-9

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