Abstract
The aim of this work is to simulate the charge transport in a monolayer graphene on a substrate. This requires the inclusion of the scatterings of the charge carriers with the impurities and the phonons of the substrate, besides the interaction mechanisms already present in the graphene layer. As physical model, the semiclassical Boltzmann equation will be assumed. Two approaches will be used for the simulations: a numerical scheme based on the Discontinuous Galerkin method for finding deterministic (non stochastic) solutions and a new Direct Monte Carlo Simulation formulated in Romano et al. (J Comput Phys 302:267–284, 2015) in order to deal in the appropriate way with the Pauli exclusion principle for degenerate Fermi gases. A cross validation of the deterministic and stochastic solutions shows the robustness and accuracy of both the approaches.
Similar content being viewed by others
Notes
We expect an exponential decay of the distribution function as \(|\mathbf {k}| \mapsto +\infty \). This is proved, under suitable conditions, for the classical Boltzmann equation of rarefied monatomic gases. In our simulations, we check if, after each time step, the values of f at the boundary of the domain \(\Omega \) are sufficiently low; otherwise, we enlarge the domain \(\Omega \) and repeat the integration starting from the initial time.
References
Romano, V., Majorana, A., Coco, M.: DSMC method consistent with Pauli exclusion principle and comparison with deterministic solutions for charge transport in graphene. J. Comput. Phys. 302, 267–284 (2015)
Kané, G., Lazzeri, M., Mauri, F.: High-field transport in graphene: the impact of Zener tunneling, J. Phys.: Condens. Matter. 27(164205), 11 (2015)
Hirai, H., Tsuchiya, H., Kamakura, Y., Mori, N., Ogawa, M.: Electron mobility calculation for graphene on substrates. J. Appl. Phys. 116, 083703 (2014)
Cockburn, B., Shu, C.-W.: The local discontinuous Galerkin method for convection-diffusion systems. SIAM J. Numer. Anal. 35, 2440–2463 (1998)
Cheng, Y., Gamba, I.M., Majorana, A.: C.-W Shu, A discontinuous Galerkin solver for Boltzmann-Poisson systems in nano devices. Comput. Methods Appl. Mech. Eng. 198, 3130–3150 (2009)
Cheng, Y., Gamba, I.M., Majorana, A., Shu, C.-W.: A brief survey of the discontinuous Galerkin method for the Boltzmann-Poisson equations. Bol. de la Soc. Esp. de Mat. Apl. 56, 47–64 (2011)
Zamponi, N., Barletti, L.: Quantum electronic transport in graphene: a kinetic and fluid-dynamical approach. Math. Methods Appl. Sci. 34, 807–818 (2011)
Camiola, V.D., Romano, V.: Hydrodynamical model for charge transport in graphene. J. Stat. Phys. 157, 11141137 (2014)
Mascali, G., Romano, V.: A comprehensive hydrodynamical model for charge transport in graphene, 978-1-4799-5433-9/14/$31.00, IEEE, IWCE-2014 Paris (2014)
Mascali, G., Romano, V.: Charge Transport in Graphene Including Thermal Effects (2015) (preprint)
Coco, M., Majorana, A., Mascali G., Romano, V.: Comparing kinetic and hydrodynamical models for electron transport in monolayer graphene. In: Schrefler, B., Onate, E., Papadrakakis, M. (eds.) VI International Conference on Computational Methods for Coupled Problems in Science and Engineering, COUPLED PROBLEMS 2015, Venezia, 18-20 May 2015, pp. 1003–1014
Hwang, E.H., Adam, S., Das, S.: Sarma, carrier transport in two-dimensional graphene layers. Phys. Rev. Lett. 98, 186806 (2007)
Hwang, E.H., Das, S.: Sarma, dielectric function, screening, and plasmon in two-dimensional graphene. J. Phys. Rev. B 75, 205418 (2007)
Castro Neto, A.H., Guinea, F., Peres, N.M.R., Novoselov, K.S., Geim, A.K.: The electronic properties of graphene. Rev. Mod. Phys. 81, 109–162 (2009)
Fang, T., Konar, A., Xing, H., Jena, D.: High-field transport in two-dimensional graphene. Phys. Rev. B 84, 125450 (2011)
Lundstrom, M.: Fundamentals of Carrier Transport. Cambridge University Press, Cambridge (2000)
Jüngel, A.: Transport Equations for Semiconductors. Lecture Notes in Physics No, vol. 773. Springer, Berlin (2009)
Majorana, A., Marano, S.: Space homogeneous solutions to the Cauchy problem for semiconductor Boltzmann equations. SIAM J. Math. Anal. 28, 1294–1308 (1997)
Majorana, A., Marano, S.: On the Cauchy problem for spatially homogeneous semiconductor Boltzmann equations: existence and uniqueness. Annali di matematica 184, 275–296 (2005)
Shu, C.-W., Osher, S.: Efficient implementation of essentially non-oscillatory shock capturing schemes. J. Comp. Phys. 77, 439–471 (1988)
LeVeque, R.J.: Numerical Methods for Conservation Laws. Birkhäuser, Basel (1992)
Harten, A., Osher, S.: Uniformly high-order accurate nonoscillatory schemes. I. SIAM J. Numer. Anal. 24, 279–309 (1987)
Jacoboni, C., Lugli, P.: The Monte Carlo Method for Semiconductor Device Simulation. Springer-Verlag, Berlin (1989)
Lugli, P., Ferry, D.K.: Degeneracy in the Ensemble Monte Carlo Method for High-Field Transport in Semiconductors, IEEE Trans. on Elect. Devices ED-32 11, pp. 2431–2437 (1985)
Tadyszak, P., Danneville, F., Cappy, A., Reggiani, L., Varani, L., Rota, L.: Monte Carlo calculations of hot-carrier noise under degenerate conditions. Appl. Phys. Lett. 69(10), 1450–1452 (1996)
Author information
Authors and Affiliations
Corresponding author
Additional information
This work has been partially supported by the University of Catania, project F. I. R. Charge transport in graphene and low dimensional systems, and by INDAM.
Rights and permissions
About this article
Cite this article
Coco, M., Majorana, A. & Romano, V. Cross validation of discontinuous Galerkin method and Monte Carlo simulations of charge transport in graphene on substrate. Ricerche mat 66, 201–220 (2017). https://doi.org/10.1007/s11587-016-0298-4
Received:
Revised:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11587-016-0298-4