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Thermal properties of 15-mol% gadolinia doped ceria thin films prepared by pulsed laser ablation

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Abstract

Thermal properties of 15-mol% gadolinia doped ceria thin films (Ce0.85Gd0.15 O1.925) prepared by pulsed laser ablation on silicon substrates in the temperature range 473–973 K are presented. Thermal diffusivities and thermal conductivities were evaluated using photoacoustic spectroscopy. The influence of grain size on thermal properties of the films as a function of deposition temperature is studied. It is observed that the thermal diffusivity and the conductivity of these films decreases up to 873 K and then increases with substrate temperatures. The thermal properties obtained in these films are discussed on the basis of influence of grain size on phonon scattering.

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Acknowledgment

The authors sincerely thank Dr. M. Vijayalakshmi, Head, Physical Metallurgy Section, Dr. P. R. Vasudeva Rao, Director, Metallurgy and Materials Group, and Dr. Baldev Raj, Director, IGCAR for the support and encouragement.

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Authors and Affiliations

  1. Department of Physics, Anna University, Chennai, 600 025, India

    K. Muthukkumaran & S. Selladurai

  2. Physical Metallurgy Section, Indira Gandhi Centre for Atomic Research, Kalpakkam, 603 102, India

    P. Kuppusami & E. Mohandas

  3. Department of Physics, Thiagarajar College, Madurai, 625 009, India

    R. Srinivasan

  4. School of Physics, Madurai Kamaraj University, Madurai, 625 021, India

    K. Ramachandran

Authors
  1. K. Muthukkumaran
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  2. P. Kuppusami
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  3. R. Srinivasan
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  4. K. Ramachandran
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  5. E. Mohandas
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  6. S. Selladurai
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Correspondence to K. Muthukkumaran.

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Muthukkumaran, K., Kuppusami, P., Srinivasan, R. et al. Thermal properties of 15-mol% gadolinia doped ceria thin films prepared by pulsed laser ablation. Ionics 13, 47–50 (2007). https://doi.org/10.1007/s11581-007-0068-0

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  • DOI: https://doi.org/10.1007/s11581-007-0068-0

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