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Dephasing effects in topological insulators

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Abstract

Topological insulators, a class of typical topological materials in both two dimensions and three dimensions, are insulating in bulk and metallic at surface. The spin-momentum locked surface states and peculiar transport properties exhibit promising potential applications on quantum devices, which generate extensive interest in the last decade. Dephasing is the process of the loss of phase coherence, which inevitably exists in a realistic sample. In this review, we focus on recent progress in dephasing effects on the topological insulators. In general, there are two types of dephasing processes: normal dephasing and spin dephasing. In two-dimensional topological insulators, the phenomenologically numerical investigation shows that the longitudinal resistance plateaus is robust against normal dephasing but fragile with spin dephasing. Several microscopic mechanisms of spin dephasing are then discussed. In three-dimensional topological insulators, the helical surface states exhibit a helical spin texture due to the spin-momentum locking mechanism. Thus, normal dephasing has close connection to spin dephasing in this case, and gives rise to anomalous “gap-like” feature. Dephasing effects on properties of helical surface states are investigated.

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Authors and Affiliations

  1. International Center for Quantum Materials and School of Physics, Peking University, Beijing, 100871, China

    Junjie Qi & X. C. Xie

  2. Collaborative Innovation Center of Quantum Matter, Beijing, China

    Junjie Qi & X. C. Xie

  3. Center for Advanced Quantum Studies, Department of Physics, Beijing Normal University, Beijing, 100875, China

    Haiwen Liu

  4. School of Physical Science and Technology, Soochow University, Suzhou, 215006, China

    Hua Jiang

  5. Institute for Advanced Study, Soochow University, Suzhou, 215006, China

    Hua Jiang

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  1. Junjie Qi
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  2. Haiwen Liu
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  3. Hua Jiang
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  4. X. C. Xie
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Correspondence to X. C. Xie.

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Acknowledgements

We are grateful to Y. Q. Li, Q. F. Sun and S. G. Cheng for collaboration and for their important contributions reviewed in this paper. This work was supported by the National Natural Science Foundation of China (Grant Nos. 11534001, 11822407, and 11674028), NBRPC (Grant Nos. 2017YFA0303301 and 2017YFA0304600), and NSF of Jiangsu Province, China (Grant No. BK20160007). H. Jiang was also funded by the Priority Academic Program Development of Jiangsu Higher Education Institutions.

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Qi, J., Liu, H., Jiang, H. et al. Dephasing effects in topological insulators. Front. Phys. 14, 43403 (2019). https://doi.org/10.1007/s11467-019-0907-2

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