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In situ carrier tuning in high temperature superconductor \(\hbox {Bi}_2\hbox {Sr}_2\hbox {CaCu}_2\hbox {O}_{8+\varvec{\delta} }\) by potassium deposition

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  • Physics & Astronomy
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Science Bulletin

Abstract

We report a successful tuning of the hole doping level over a wide range in high temperature superconductor \(\hbox {Bi}_2\hbox {Sr}_2\hbox {CaCu}_2\hbox {O}_{8+\delta }\) (Bi2212) through successive in situ potassium (K) deposition. By taking high resolution angle-resolved photoemission measurements on the Fermi surface and band structure of an overdoped Bi2212 (\(T_\mathrm{c}=76\) K) at different stages of K deposition, we found that the area of the hole-like Fermi surface around the Brillouin zone corner (\(\pi \),\(\pi \)) shrinks with increasing K deposition. This indicates a continuous hole concentration change from initial \(\sim \)0.26 to eventual 0.09 after extensive K deposition, a net doping level change of 0.17 that makes it possible to bring Bi2212 from being originally overdoped, to optimally-doped, and eventually becoming heavily underdoped. The electronic behaviors with K deposition are consistent with those of Bi2212 samples with different hole doping levels. These results demonstrate that K deposition is an effective way of in situ controlling the hole concentration in Bi2212. This work opens a good way of studying the doping evolution of electronic structure and establishing the electronic phase diagram in Bi2212 that can be extended to other cuprate superconductors.

摘要

通过在高温超导体Bi2212样品表面进行原位蒸K, 我们成功地实现了空穴载流子浓度的大范围调节. 通过使用高分辨的ARPES系统对过掺杂Bi2212 (Tc = 76 K) 样品在不同的蒸K阶段的费米面和能带进行研究, 我们发现其围绕布里渊区顶点 (π, π) 的费米面面积会随着K的增加而减小. 随着持续的蒸K过程, 空穴载流子浓度从最初的0.26减小到了最终的0.09, 0.17的载流子浓度变化使得Bi2212样品从最初的过掺杂区域跨越最佳掺杂进入了欠掺杂区域. 而且过掺杂Bi2212蒸K过程中电子结构的性质与通过其他方式得到的不同空穴载流子浓度的Bi2212样品相一致. 结果表明, 原位蒸K的方法是一种有效控制Bi2212中空穴载流子浓度的方法. 这对研究铜基高温超导体的物理性质. 晶格结构以及超导机理是非常重要的, 同时也可以应用到其他铜基高温超导材料中.

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Acknowledgments

XJZ thanks financial support from the National Natural Science foundation of China (11190022,11334010 and 11534007), the National Basic Research Program of China (2015CB921000) and the Strategic Priority Research Program (B) of Chinese Academy of Sciences (XDB07020300).

Conflict of interest

The authors declare that they have no conflict of interest.

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Authors and Affiliations

  1. National Laboratory for Superconductivity, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    Yuxiao Zhang, Cheng Hu, Yong Hu, Lin Zhao, Ying Ding, Xuan Sun, Aiji Liang, Yan Zhang, Shaolong He, Defa Liu, Li Yu, Guodong Liu, Xiaoli Dong & Xingjiang Zhou

  2. Brookhaven National Laboratory, Condensed Matter Physics and Materials Science Department, New York, NY, 11973, USA

    Genda Gu

  3. Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China

    Chuangtian Chen & Zuyan Xu

  4. Collaborative Innovation Center of Quantum Matter, Beijing, 100871, China

    Xingjiang Zhou

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  1. Yuxiao Zhang
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Correspondence to Lin Zhao or Xingjiang Zhou.

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Zhang, Y., Hu, C., Hu, Y. et al. In situ carrier tuning in high temperature superconductor \(\hbox {Bi}_2\hbox {Sr}_2\hbox {CaCu}_2\hbox {O}_{8+\varvec{\delta} }\) by potassium deposition. Sci. Bull. 61, 1037–1043 (2016). https://doi.org/10.1007/s11434-016-1106-y

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  • DOI: https://doi.org/10.1007/s11434-016-1106-y

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