Abstract
In this paper, a dual-band notch filter for two-layer frequency selective surface (FSS) at terahertz (THz) frequency with high filtering performance has been realized on high-resistivity silicon substrates. With periodic metallic resonators patterned on the silicon wafer, the designed filter can provide two tunable resonant frequencies for terahertz application. The transmission response was improved by introducing an extra surrounding pattern around the T-shaped structure, and the location of transmission drop was tuned independently with geometric parameters. Simulated by finite-integral time-domain method, the filter is designed to operate between 0.2 and 0.6 THz with dual-band band-stop performance, a salient feature of this design is making the low sensitivity of its frequency response to the incident angles, which allows to place the filter close to the radiation source with spherical wave fronts. The proposed structures were fabricated using photolithography and tested by THz time-domain spectroscopy system. Experimental results show that the transmission response has more than 12 and 32 dB rejections near 285 and 460 GHz respectively, which is in good agreement with the simulation result.
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Zhang, J., Zhang, Y., Gao, K. et al. Research of the terahertz dual-band notch filter based on FSS structures. Chin. Sci. Bull. 58, 4687–4691 (2013). https://doi.org/10.1007/s11434-013-6093-7
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DOI: https://doi.org/10.1007/s11434-013-6093-7