Abstract
We developed a cluster ion beam system that produces negative cluster beams of C1–C10 with ion current of 4.5 nA-50 μA at extraction voltages ranging from 6 to 20 kV. The system uses the injector of a tandetron accelerator and was established by inserting an electrostatic scanner on its ion-optical line and modifying its Faraday cup into a substrate holder. Utilization of clusters enables ultrashallow ion implantation at energies as low as 600 eV/atom without deceleration. Small carbon clusters C2 and C4 were implanted into Ni/SiO2/Si substrates and following post-thermal treatment graphene was obtained. Raman spectroscopy showed characteristic 2D peaks with G-to-2D peak ratios revealing formation of 2–3 layers of graphene. The Raman data reveals clear effect of nonlinear cluster-surface interaction in ion beam synthesis of two-dimensional nanomaterials.
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Wang, Z., Zhang, Z., Zhang, R. et al. An ultralow-energy negative cluster ion beam system and its application in preparation of few-layer graphene. Chin. Sci. Bull. 57, 3556–3559 (2012). https://doi.org/10.1007/s11434-012-5397-3
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DOI: https://doi.org/10.1007/s11434-012-5397-3