Abstract
Resistive random access memory (RRAM) has received significant research interest because of its promising potential in terms of down-scaling, high density, high speed and low power. However, its endurance, retention and uniformity are still imperfect. In this article, the physical mechanisms of filament-type RRAM and the approaches for improving the switching performance, including doping, process optimization and interface engineering, are introduced.
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References
Waser R. Resistive non-volatile memory devices. Microelectron Eng, 2009, 86: 1925–1928
Kund M, Beitel G, Pinnow C U, et al. Conductive bridging RAM (CBRAM): An emerging non-volatile memory technology scalable to sub 20 nm. IEDM Tech Dig, 2005, 773–776
Strukov D B, Snider G S, Stewart D R, et al. The missing memristor found. Nature, 2008, 453: 80–83
Yang Y C, Pan F, Liu Q, et al. Fully room-remperature-fabricated nonvolatile resistive memory for ultrafast and high-density memory application. Nano Lett, 2009, 1636–1643
Kwon D H, Kim K M, Jang J H, et al. Atomic structure of conducting nanfilaments in TiO2 resistive switching memory. Nat Nanotech, 2010, 5: 148–153
Liu Q, Guan W H, Long S B, et al. Resistive switching memory effect of ZrO2 films with Zr+ implanted. Appl Phys Lett, 2008, 92: 012117
Liu Q, Guan W H, Long S B, et al. Resistive switching of Au-implanted-ZrO2 film for nonvolatile memory application. J Appl Phys, 2008, 104: 114514
Guan W H, Liu M, Long S B, et al. On the resistive switching mechanisms of Cu/ZrO2:Cu/Pt. Appl Phys Lett, 2008, 93: 223506
Liu Q, Liu M, Long S B, et al. Improvement of resistive switching properties in ZrO2-based ReRAM with implanted metal ions. In: Proc ESSDERC, 2009. 221–224
Liu Q, Long S B, Wang W, et al. Improvement of resistive switching properties in ZrO2-based ReRAM with implanted Ti ions. IEEE Electron Device Lett, 2009, 30: 1335–1337
Schindler C, Thermadam S C R, Waser R, et al. Bipolar and unipolar resistive switching in Cu-doped SiO2. IEEE Trans Electron Device, 2007, 54: 2762–2768
Lee D, Hwang D K, Chang M, et al. Resistance switching of Al doped ZnO for non volatile memory applications. In: Proc NVSMW, 2006. 86–87
Dearnaley G, Stoneham A M, Morgan D V, et al. Electrical phenomenona in amorphous oxide films. Rep Prog Phys, 1970, 33: 1129–1191
Tsunoda K, Kinoshita K, Noshiro H, et al. Low power and high speed switching of Ti-doped NiO RRAM under the unipolar voltage source of less than 3 V. IEDM Tech Dig, 2007, 767
Jung K, Choi J, Kim Y, et al. Resistance switching characteristics in Li-doped NiO. J Appl Phys, 2008, 103: 034504
Gao B, Zhang H W, Yu S, et al. Oxide-Based RRAM: Uniformity improvement using a new material-oriented methodology. VLSI Tech Dig, 2009, 30–31
Park J W, Park J W, Jung K, et al. Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications. J Vac Sci Technol, 2006, 24: 2205–2208
Jung R, Lee M J, Seo S, et al. Decrease in switching voltage fluctuation of Pt/NiOx/Pt structure by process control. Appl Phys Lett, 2007, 91: 022112
Lin C Y, Lee D Y, Wang S Y, et al. Effect of thermal treatment on resistive switching characteristics in Pt/Ti/Al2O3/Pt devices. Surface Coati Tech, 2008: 628–631
Bockris, John O’M R. Modern Electrochemistry. New york: Planum Press, 1998
Lin C Y, Wu C Y, Wu C Y, et al. Modified resistive switching behavior of ZrO2 memory films based on the interface layer formed by using Ti top electrode. J Appl Phys, 2007, 102: 094101
Lin C Y, Wu C Y, Wu C Y, et al. Effect of top electrode material on resistive switching properties of ZrO2 film memory devices. IEEE Electron Device Lett, 2007, 28: 366–368
Lv H B, Wang M, Wan H J, et al. Endurance enhancement of Cu-oxide based resistive switching memory with Al top electrode. Appl Phys Lett, 2009, 94: 213502
Kwak J S, Do Y H, Bae Y C, et al. Roles of interfacial TiOxN1−x layer and TiN electrode on bipolar resistive switching in TiN/TiO2/TiN frameworks. Appl Phys Lett, 2010, 96: 223502
Lee H Y, Chen P S, Wu T Y, et al. Low power and high speed bipolar switching with a thin buffer layer in robust HfO2 Based RRAM. IEDM Tech, 2008, 1–4
Chen Y S, Lee H Y, Chen P S, et al. Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity. IEDM Tech, 2009, 1–4
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Lian, W., Long, S., Lü, H. et al. Approaches for improving the performance of filament-type resistive switching memory. Chin. Sci. Bull. 56, 461–464 (2011). https://doi.org/10.1007/s11434-010-4255-4
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DOI: https://doi.org/10.1007/s11434-010-4255-4