Abstract
A new method for fabricating electroabsorption modulator integrated with a distributed feedback laser (EML) was proposed. With the method we fabricated a selective area growth double stack active layer EML (SAG-DSAL-EML). Through comparing with other fabrication methods of EMLs, the characters and the merits of the new method presented in this paper were discussed.
Similar content being viewed by others
References
Takeuchi H, Tsuzuki K, Sato K, et al. Very high-speed light-source up to 40Gb/s containing an MQW electroabsorption modulator integrated with a DFB laser. IEEE J Sel Topics Quantum Electron, 1997, 3: 336–343
Hu X H, Wang W, Zhu H L, et al. A new LP-MOCVD butt joint method for electroabsorption modulator integrated with a DFB MQW laser (in Chinese). Chinese J Semiconductors, 2003, 24: 841–846
Aoki M, Suzuki M, Sano H, et al. InGaAs/InGaAsP MQW electroabsorption modulator integrated with a DFB laser fabricated by band-gap energy control selective area MOCVD. IEEE J Quantum Electron, 1993, 29: 2088–2096
Liu G L, Wang W, Zhang J Y, et al. A single ridge structure electroabsorption modulator integrated with a DFB laser(in Chinese). Chin Lasers, 2001, 28: 1057–1060
Stegmuller B, Bai]r E, Kicher M. 15GHz modulation performance of integrated a DFB laser diode EA modulator with identical multiple-quantum-well double-stack active layer. IEEE Photon Tech Lett, 2002,14: 1647–1649
Luo Y, Wen G P, Sun C Z, et al. 2.5 Gb/s electroabsorption modulator integrated with partially gain-coupled distributed feedback laser fabricated using a very simple device structure. Jpn J Appl Phys, 1999, 38: 524–526
Aizawa T, Ravikumar K G, Suzaki S, et al. Polarization-independent quantum-confined stark effect in an InGaAs/InP tensile-strained quantum well. IEEE J Quantum Electron, 1994, 30: 585–592
Huang Z Y. Devices and Systems for Optical Fiber Communication (in Chinese). Beijing: Publishing House of Beijing University of Posts and Telecommunications, 2001. 184-190
Hu X H, Li B X, Zhu H L, et al. Monolithic integration of electroabsorption modulators and dfb lasers by modified double stack active layer approach. Chinese J Semiconductors, 2004, 25: 481–485
Author information
Authors and Affiliations
Corresponding author
Additional information
Supported by the National High-Tech Research and Development Program of China (Grant Nos. 2001AA312050, 2005AA31g060 and 2007AA-03Z417)
About this article
Cite this article
Zhu, H., Liang, S., Zhao, L. et al. A selective area growth double stack active layer electroabsorption modulator integrated with a distributed feedback laser. Chin. Sci. Bull. 54, 3627–3632 (2009). https://doi.org/10.1007/s11434-009-0605-5
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s11434-009-0605-5