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High quality p-type ZnO film growth by a simple method and its properties

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Chinese Science Bulletin

Abstract

P-type ZnO:N films have been grown successfully by chemical vapor deposition (CVD) using Zn4(OH)2(O2CCH3)6 · 2H2O as the solid source material and ZnNO3 as the doping source material. XPS, Hall-effect measurement and PL spectra were employed to analyze the structural, electrical and optical properties and study the influence of substrate temperature on the film. Results showed that with a lower substrate temperature, the film exhibited p-type conduction and its resistivity decreased when the substrate temperature increased. When the substrates temperature was 400°C, p-type ZnO films were obtained with carrier concentration of +5.127×1017 cm−3, resistivity of 0.04706 Ω · cm and Hall mobility of 259 cm2/(V · s); they still exhibited p-type conduction after a month. When the substrate temperature was too high, the film was transformed from p-type to n-type conduction.

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Authors and Affiliations

  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu, 610054, China

    FeiYan Mao, Hong Deng, LiPing Dai, JinJu Chen & Yan Li

  2. School of Physical Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, China

    ZhaoLin Yuan

Authors
  1. FeiYan Mao
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  2. Hong Deng
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  3. LiPing Dai
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  4. JinJu Chen
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  5. ZhaoLin Yuan
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  6. Yan Li
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Corresponding author

Correspondence to Hong Deng.

Additional information

Supported by Chengdu Science and Technology Project (Grant No. 07GGYB572GX) and Fund of State Key Laboratory (Grant No. L08010301JX0615)

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Mao, F., Deng, H., Dai, L. et al. High quality p-type ZnO film growth by a simple method and its properties. Chin. Sci. Bull. 53, 2582–2585 (2008). https://doi.org/10.1007/s11434-008-0357-7

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  • DOI: https://doi.org/10.1007/s11434-008-0357-7

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