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Resonant tunneling properties of photonic crystals consisting of single-negative materials

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  • Optics
  • Published:
Chinese Science Bulletin

Abstract

We studied the resonant tunneling properties of one-dimensional photonic crystals consisting of single-negative permittivity and single-negative permeability media using transfer matrix methods. The results show that there exists a pair of resonant tunneling modes in this structure. The separation of the pair of tunneling modes can be tuned by varying the ratio of thicknesses of the two single-negative layers or the thickness of the defect layer. The electric field intensity of the resonant tunneling modes increases rapidly with the increase of the ratio of thicknesses of the two single-negative layers. The peak value of the field intensity of the resonant tunneling modes is enhanced by one order of magnitude when the ratio of thicknesses of the two single-negative layers increases by 0.4. This property will be applied widely in the field of nonlinearity optics. With the increase of the ratio of thicknesses of the two single-negative layers, the electric field of the tunneling modes becomes more localized, and the full width at half maximum of the tunneling modes becomes narrower. Besides, the pair of tunneling modes is insensitive to incident angle and thickness fluctuation. These properties will be used for the design of tunable omnidirectional double-channel filter with high quality factor.

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Authors and Affiliations

  1. Department of Physics, Nanchang University, Nanchang, 330031, China

    Deng XinHua & Liu NianHua

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  1. Deng XinHua
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  2. Liu NianHua
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Correspondence to Deng XinHua.

Additional information

Supported by the National Natural Science Foundation of China (Grant Nos. 60268001 and 10664002) and Science Foundation of Nanchang University

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Deng, X., Liu, N. Resonant tunneling properties of photonic crystals consisting of single-negative materials. Chin. Sci. Bull. 53, 529–533 (2008). https://doi.org/10.1007/s11434-008-0135-6

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  • DOI: https://doi.org/10.1007/s11434-008-0135-6

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