Skip to main content
Log in

Local electronic structure and magnetic properties of (Ga,Cr)N

  • Articles
  • Published:
Chinese Science Bulletin

Abstract

The local electronic structure and magnetic properties of diluted magnetic semiconductor (Ga,Cr)N have been studied by using discrete variational method (DVM) based on density functional theory. The magnetic moments per Cr atom vary significantly with Cr concentration, and the trend of variation is in agreement with that of the experiment. The coupling between Cr atoms in the system with two Cr atoms considered is found to be ferromagnetic, and the magnetic moment per Cr atom is similar to the case in which only one Cr atom is considered in the same doping concentration. For all doping concentrations, the coupling between Cr and the nearest neighbor N is found to be antiferromagnetic, and the Cr 3d states hybridize strongly with N 2p states, which are in agreement with the band calculations.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  1. Ohno H. Making nonmagnetic semiconductors ferromagnetic. Science, 1998, 281: 951–956

    Article  Google Scholar 

  2. Dietl T, Ohno H, Matsukura F. Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors. Phys Rev B, 2001, 63: 195205(1)–195205(21)

    Article  Google Scholar 

  3. Sasaki T, Sonada S, Yamamoto Y, et al. Magnetic and transport characteristics on high Curie temperature ferromagnet of Mn-doped GaN. J Appl Phys, 2002, 91: 7911–7913

    Article  Google Scholar 

  4. Liu H X, Wu S Y, Singh R K, et al. Observation of ferromagnetism above 900 K in Cr-GaN and Cr-AlN. Appl Phys Lett, 2004, 85: 4076–4078

    Article  Google Scholar 

  5. Kulatov E, Nakayama H, Mariette H, et al. Electronic structure, magnetic ordering, and optical properties of GaN and GaAs doped with Mn. Phys Rev B, 2002, 66: 045203(1)–045203(9)

    Article  Google Scholar 

  6. Fong C Y, Gubanov V A, Boekema C. Iron and managanese doped Zinc-Blende GaN. J Electron Mater, 2000, 29: 1067–1073

    Google Scholar 

  7. Sanyal B, Bengone O, Mirbt S. Electronic structure and magnetism of Mn-doped GaN. Phys Rev B, 2003, 68: 205210(1)–205210(7)

    Google Scholar 

  8. Jain M, Kronik L, Chelikowsky J. Electronic structure and spin polarization of Mn-containing dilute magnetic III-V semiconductors. Phys Rev B, 2001, 64: 245205(1)–245205(5)

    Article  Google Scholar 

  9. Das G P, Rao B K, Jena P. Ferromagnetism in Cr-doped GaN: A first-principles calculation. Phys Rev B, 2004, 69: 214422(1)–214422(6)

    Google Scholar 

  10. Xu J L, Van Schilfgaarde M. Role of disorder in Mn: GaAs, Cr: GaAs, and Cr: GaN. Phys Rev Lett, 2005, 94: 097201(1)–097201(4)

    Google Scholar 

  11. Kohn W, Sham L J. Self-consistent equations including exchange and correlation effects. Phys Rev, 1965, 140(4A): 1133–1138

    Article  Google Scholar 

  12. Ellis D E, Painter G S. Discrete variational method for the energy-band problem with general crystal potentials. Phys Rev B, 1970, 2: 2887–2898

    Article  Google Scholar 

  13. Gu B, Xu Y, Sun K, et al. Film and interface of heteroepitaxial cubic GaN on (001)GaAs Substrates. Chinese Journal of Semiconductors (in Chinese), 1998, 19(4): 241–244

    Google Scholar 

  14. Delley B, Ellis D E, Freeman A J, et al. Binding energy and electronic structure of small copper particles. Phys Rev B, 1983, 27: 2132–2144

    Article  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Duan Haiming.

About this article

Cite this article

Lin, H., Duan, H. Local electronic structure and magnetic properties of (Ga,Cr)N. CHINESE SCI BULL 51, 1546–1550 (2006). https://doi.org/10.1007/s11434-006-2002-7

Download citation

  • Received:

  • Accepted:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11434-006-2002-7

Keywords

Navigation