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Investigation of Ag(Ga,In)Se2 as thin-film solar cell absorbers: A first-principles study

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Abstract

Using first-principles calculations, the structural, electronic, and defect properties of AgInSe2 (AIS), AgGaSe2 (AGS), and their alloys (AIGS) are systematically studied and compared with their Cu counterparts as potential candidates for thin-film solar cell absorbers. The bandgap energies of AIS (1.24 eV) and AGS (1.84 eV) are larger than their Cu counterparts, despite their larger lattice parameters. According to the Shockley-Queisser theory, AIS or AIGS could be more suitable for solar-cell-absorber materials than their Cu counterparts. However, after investigating the band structures and intrinsic defect properties of AIS and AGS, we find that, (i) AIS and AGS have large negative crystal field splitting, thus low density of states near the valence band maximum (VBM); (ii) similar to the Cu counterparts, Ag vacancy (VAg) is the main hole-carrier provider, while InAg (or GaAg) serves as the hole-carrier killer in p-type AIS (or AGS). However, because the positions of the VBM and conduction band minimum of AIS (or AGS) are lower than those of CuInSe2 (CIS) [or CuGaSe2 (CGS)], the compensation of the p-type doping in AIS (or AGS) is more severe. Thus, the p-type doping of AIS (or AIGS) is more difficult than that of CIS (or CIGS), which is consistent with the doping limit rule. To improve the p-type doping of the AIS (or AIGS) as the solar-cell absorber, thus, improve the power conversion efficiency (PCE), the Ag-rich/(In,Ga)-poor/Se-rich growth condition is preferred. Alloy engineering of AIS with AGS can enhance the PCE because it can tune the bandgap energy of the absorber and band alignment at the absorber/buffer interface. More importantly, we suggest that for AIS (or AIGS) solar cell, the traditional buffer material of CdS is not suitable anymore due to the large conduction band offset between AIS and CdS. A new buffer layer material with a lower conduction band edge is necessary for better electron transport in AIS (or AIGS) solar cell.

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Authors and Affiliations

  1. Institute of Advanced Semiconductors & Zhejiang Provincial Key Laboratory of Power Semiconductor Materials and Devices, ZJU-Hangzhou Global Scientific and Technological Innovation Center, Hangzhou, 311200, China

    Rong Wang

  2. Beijing Computational Science Research Center, Beijing, 100193, China

    Baoying Dou, Yifeng Zheng & Su-Huai Wei

Authors
  1. Rong Wang
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  2. Baoying Dou
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  3. Yifeng Zheng
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  4. Su-Huai Wei
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Correspondence to Su-Huai Wei.

Additional information

This work was supported by the National Natural Science Foundation of China (Grant Nos. 11991060, 12088101, and U1930402). National Supercomputer Center in Tianjin is acknowledged for computational support.

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Wang, R., Dou, B., Zheng, Y. et al. Investigation of Ag(Ga,In)Se2 as thin-film solar cell absorbers: A first-principles study. Sci. China Phys. Mech. Astron. 65, 107311 (2022). https://doi.org/10.1007/s11433-022-1935-3

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  • DOI: https://doi.org/10.1007/s11433-022-1935-3

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