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The 2-axis stress component decoupling of {100} c-Si by using oblique backscattering micro-Raman spectroscopy

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Abstract

With the application of strain engineering in microelectronics, complex stress states are introduced into advanced semiconductor devices. However, there is still a lack of effective metrology for the decoupling analysis of the complex stress states in semiconductor materials. This paper presents an investigation on the 2-axis stress component decoupling of {100} monocrystalline silicon (c-Si) by using oblique backscattering micro-Raman spectroscopy. A spectral-mechanical model was established, and two practicable methods for actual stress decoupling analyses were proposed. The verification experiments demonstrated the correctness and applicability of the methods proposed in this paper.

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Authors and Affiliations

  1. Tianjin Key Laboratory of Modern Engineering Mechanics, Department of Mechanics, Tianjin University, Tianjin, 300350, China

    DongHui Fu, XiaoYong He, LuLu Ma, HuaDan Xing, Tian Meng, Ying Chang & Wei Qiu

  2. Department of Mechanical Engineering, Lamar University, Beaumont, TX, 77710, USA

    LuLu Ma & Wei Qiu

  3. Department of Electrical and Computer Engineering, University of Delaware, Newark, DE, 19711, USA

    HuaDan Xing

Authors
  1. DongHui Fu
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  2. XiaoYong He
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  3. LuLu Ma
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  4. HuaDan Xing
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  5. Tian Meng
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  6. Ying Chang
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  7. Wei Qiu
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Corresponding author

Correspondence to Wei Qiu.

Additional information

This work was supported by the National Key Research and Development Program of China (Grant No. 2018YFB0703500), and the National Natural Science Foundation of China (Grant Nos. 11827802, 11772223, 11772227, 11890680, and 61727810).

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Fu, D., He, X., Ma, L. et al. The 2-axis stress component decoupling of {100} c-Si by using oblique backscattering micro-Raman spectroscopy. Sci. China Phys. Mech. Astron. 63, 294612 (2020). https://doi.org/10.1007/s11433-020-1537-y

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  • DOI: https://doi.org/10.1007/s11433-020-1537-y

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