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Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films

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Abstract

High quality chromium (Cr) doped three-dimensional topological insulator (TI) Sb2Te3 films are grown via molecular beam epitaxy on heat-treated insulating SrTiO3 (111) substrates. We report that the Dirac surface states are insensitive to Cr doping, and a perfect robust long-range ferromagnetic order is unveiled in epitaxial Sb2–x Cr x Te3 films. The anomalous Hall effect is modulated by applying a bottom gate, contrary to the ferromagnetism in conventional diluted magnetic semiconductors (DMSs), here the coercivity field is not significantly changed with decreasing carrier density. Carrier-independent ferromagnetism heralds Sb2–x Cr x Te3 films as the base candidate TI material to realize the quantum anomalous Hall (QAH) effect. These results also indicate the potential of controlling anomalous Hall voltage in future TI-based magneto-electronics and spintronics.

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Authors and Affiliations

  1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing, 100084, China

    CuiZu Chang, MinHao Liu, ZuoCheng Zhang, YaYu Wang, Ke He & QiKun Xue

  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    CuiZu Chang, Ke He & QiKun Xue

  3. Francis Bitter Magnet Lab, Massachusetts Institute of Technology, Cambridge, MA, 02139, USA

    CuiZu Chang

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  1. CuiZu Chang
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  2. MinHao Liu
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  3. ZuoCheng Zhang
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  4. YaYu Wang
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  5. Ke He
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  6. QiKun Xue
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Correspondence to CuiZu Chang.

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Recommended by Jing Shi (Associate Editor)

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Chang, C., Liu, M., Zhang, Z. et al. Field-effect modulation of anomalous Hall effect in diluted ferromagnetic topological insulator epitaxial films. Sci. China Phys. Mech. Astron. 59, 637501 (2016). https://doi.org/10.1007/s11433-015-5761-9

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