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Review of advanced CMOS technology for post-Moore era

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Abstract

The continuous downsizing of device has sustained Moore’s law in the past 40 years. As the power dissipation becomes more and more serious, a lot of emerging technologies have been adopted in the past decade to solve the short channel effect, leakage and performance degradation problems. In this paper, the emerging scaling technologies and device innovations, including high-k/metal gate, strain, ultra-shallow junction, tri-gate FinFET, extremely thin SOI and silicon nanowire FET will be reviewed and discussed in terms of the potential and challenge for post-Moore era.

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  1. Institute of Microelectronics, Peking University, Beijing, 100871, China

    Ming Li

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Correspondence to Ming Li.

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Li, M. Review of advanced CMOS technology for post-Moore era. Sci. China Phys. Mech. Astron. 55, 2316–2325 (2012). https://doi.org/10.1007/s11433-012-4930-3

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  • DOI: https://doi.org/10.1007/s11433-012-4930-3

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