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Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification

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Abstract

We obtained n-type and p-type modified graphene by mixing quantum dots and depositing electron-acceptor molecules on the surface of graphene, respectively. The electrical and optical properties of these two types of samples were measured. For n-type modified graphene, the electrons were transferred from quantum dots to graphene. The resistance of these quantum dots in modified n-type graphene is significantly smaller than that of pristine graphene. For p-type graphene, modified by electron-acceptor organic molecules of tetracyanoethylene (TCNE), electrons were transferred from graphene to TCNE molecules. The resistance of this molecular modified p-type graphene is about 10% larger than that of pristine graphene. The charge transfer effect on the optical properties of graphene was investigated with Raman spectra.

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Authors and Affiliations

  1. College of Science, Yanshan University, Qinhuangdao, 066004, China

    YanXue Hou

  2. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, 100190, China

    YanXue Hou, YuanZuo Li, Bin Dong & MengTao Sun

  3. Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou, 215125, China

    XiuMei Geng & LiWei Liu

  4. School of Science, Dalian Nationalities University, Dalian, 116600, China

    YuanZuo Li & Bin Dong

Authors
  1. YanXue Hou
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  2. XiuMei Geng
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  3. YuanZuo Li
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  4. Bin Dong
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  5. LiWei Liu
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  6. MengTao Sun
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Correspondence to Bin Dong or MengTao Sun.

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Hou, Y., Geng, X., Li, Y. et al. Electrical and Raman properties of p-type and n-type modified graphene by inorganic quantum dot and organic molecule modification. Sci. China Phys. Mech. Astron. 54, 416–419 (2011). https://doi.org/10.1007/s11433-011-4253-9

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  • DOI: https://doi.org/10.1007/s11433-011-4253-9

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