Abstract
The high pressure radio frequency plasma enhanced chemical vapor deposition (RF-PECVD) process was adopted to prepare the n-i-p microcrystalline silicon solar cells, the influence of p-type layers on the performance of the solar cells was investigated, and the optimum p layer suited to the n-i-p microcrystalline silicon solar cells was obtained. The experimental results demonstrate that the performance of the solar cells can be highly affected by the structural and optical properties of the p-layers, and the performance of solar cells can be greatly improved by optimizing p layers. We have achieved an initial active-area efficiency of 8.17% (V oc=0.49 V, J sc=24.9 mA/cm2, FF=67%) for the μc-Si:H single-junction n-i-p solar cells and an initial active-area efficiency of 10.93% (V oc=1.31 V, J sc=13.09 mA/cm2, FF=64%) for the a-Si:H/μc-Si:H tandem n-i-p solar cells.
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Yuan, Y., Zhang, K., Wei, Z. et al. Influence of p-layer on the performance of n-i-p μc-Si:H thin film solar cells. Sci. China Phys. Mech. Astron. 53, 2042–2046 (2010). https://doi.org/10.1007/s11433-010-4143-6
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DOI: https://doi.org/10.1007/s11433-010-4143-6