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Investigation of NbOx-based volatile switching device with self-rectifying characteristics

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Conclusion

The niobium oxide based nonlinear devices were fabricated and analyzed. The electrical tests present good control over device-to-device variation and stable endurance more than 106. The conduction mechanism was comprehensively discussed. The low-voltage region relates to SCLC, while Schottky and F-N tunneling are responsible for negative and positive high-voltage region respectively. Consequently, the volatile switching may originate from the capture and release of electrons by traps in SCLC mechanism, and this relaxation phenomenon is evaluated quantitatively.

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Acknowledgements

This work was supported by National Natural Science Foundation of China (Grant Nos. 61834001, 61574007, 61421005) and 111 Project (Grant No. B18001).

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Authors and Affiliations

  1. Key Laboratory of Microelectronic Devices and Circuits (MOE), Institute of Microelectronics, Peking University, Beijing, 100871, China

    Yichen Fang, Zongwei Wang, Caidie Cheng, Zhizhen Yu, Teng Zhang, Yuchao Yang, Yimao Cai & Ru Huang

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  1. Yichen Fang
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  2. Zongwei Wang
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  3. Caidie Cheng
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  4. Zhizhen Yu
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  5. Teng Zhang
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  6. Yuchao Yang
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  7. Yimao Cai
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  8. Ru Huang
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Correspondence to Yimao Cai.

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Fang, Y., Wang, Z., Cheng, C. et al. Investigation of NbOx-based volatile switching device with self-rectifying characteristics. Sci. China Inf. Sci. 62, 229401 (2019). https://doi.org/10.1007/s11432-019-9894-0

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  • DOI: https://doi.org/10.1007/s11432-019-9894-0

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