Skip to main content
SpringerLink
Log in

45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner

  • Research Paper
  • Special Focus on Millimeter Wave Communications Techniques and Devices for 5G
  • Published:
Science China Information Sciences Aims and scope Submit manuscript

Abstract

In this paper, 45 GHz and 60 GHz power amplifiers (PAs) with high output power have been successfully designed by using 90 nm CMOS process. The 45 GHz (60 GHz) PA consists of two (four) differential stages. The sizes of transistors have been designed in an appropriate way so as to trade-off gain, efficiency and stability. Due to limited supply voltage and low breakdown voltage of CMOS MOSFET compared with the traditional III-V technologies, the technique of power combining has been applied to achieve a high output power. In particular, a novel 8-way distributed active transformer power combiner has been proposed for realizing such mm-wave PA. The proposed transformer combiner with a fully symmetrical layout can improve its input impedance balance at mm-wave frequency regime significantly. Taking its advantages of this novel transformer based power combiner, our realized 45 GHz (60 GHz) mm-wave PA has achieved the gain of 20.3 dB (16.8 dB), the maximum PAE of 14.5% (13.4%) and the saturated output power of 21 dBm (21 dBm) with the 1.2 V supply voltage.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. Kang K, Lin F, Pham D D, et al. A 60-GHz OOK receiver with an on-chip antenna in 90 nm CMOS. IEEE J Solid-State Circ, 2010, 45: 1720–1731

    Article  Google Scholar 

  2. Yao T, Gordon M Q, Tang K K W, et al. Algorithmic design of CMOS LNAs and PAs for 60-GHz radio. IEEE J Solid-State Circ, 2007, 42: 1044–1057

    Article  Google Scholar 

  3. Law C Y, Pham A V. A high-gain 60 GHz power amplifier with 20 dBm output power in 90 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2010. 426–427

    Google Scholar 

  4. Wei T, Carley L R, Ricketts D S. A 0.7 W fully integrated 42 GHz power amplifier with 10% PAE in 0.13µm SiGe. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2013. 142–143

    Google Scholar 

  5. Martineau B, Knopik V, Siligaris A, et al. A 53-to-68 GHz 18 dBm power amplifier with an 8-way combiner in standard 65 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2010. 428–429

    Google Scholar 

  6. Bhat R, Chakrabarti A, Krishnaswamy H. Large-scale power-combining and linearization in watt-class mmWave CMOS power amplifiers. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Seattle, 2013. 283–286

    Google Scholar 

  7. Hsiao Y H, Tsai Z M, Liao H C, et al. Millimeter-wave CMOS power amplifiers with high output power and wideband performances. IEEE Trans Microw Theory Tech, 2013, 61: 4520–4533

    Article  Google Scholar 

  8. Oh J, Ku B, Hong S. A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer. IEEE Trans Microw Theory Tech, 2013, 61: 2662–2669

    Article  Google Scholar 

  9. Yeh J F, Tsai J H, Huang T W. A 60-GHz power amplifier design using dual-radial symmetric architecture in 90-nm low-power CMOS. IEEE Trans Microw Theory Tech, 2013, 61: 1280–1290

    Article  Google Scholar 

  10. Agah A, Dabag H, Hanafi B, et al. A 34% PAE, 18.6 dBm 42–45 GHz stacked power amplifier in 45 nm SOI CMOS. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Montreal, 2012. 57–60

    Google Scholar 

  11. Dabag H T, Hanafi B, Golcuk F, et al. Analysis and design of stacked-FET millimeter-wave power amplifiers. IEEE Trans Microw Theory Tech, 2013, 61: 1543–1556

    Article  Google Scholar 

  12. Chakrabarti A, Krishnaswamy H. High-power high-efficiency class-E-like stacked mmWave PAs in SOI and Bulk CMOS: theory and implementation. IEEE Trans Microw Theory Tech, 2014, 62: 1686–1704

    Article  Google Scholar 

  13. Chakrabarti A, Krishnaswamy H. High power, high efficiency stacked mmWave Class-E-like power amplifiers in 45 nm SOI CMOS. In: Proceedings of IEEE Custom Integrated Circuits Conference, San Jose, 2012. 1–4

    Google Scholar 

  14. Pornpromlikit S, Dabag H T, Hanafi B, et al. A Q-band amplifier implemented with stacked 45-nm CMOS FETs. In: Proceedings of IEEE Compound Semiconductor Integrated Circuit Symposium, Waikoloa, 2011. 175–178

    Google Scholar 

  15. Zhao Y, Long J R, Spirito M. A 60 GHz-band 20 dBm power amplifier with 20% peak PAE. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, 2011. 1–4

    Google Scholar 

  16. Chen J, Niknejad A M. A compact 1V 18.6 dBm 60 GHz power amplifier in 65 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2011. 432–433

    Google Scholar 

  17. He Y, Li L, Reynaert P. 60 GHz power amplifier with distributed active transformer and local feedback. In: Proceedings of IEEE European Solid State Circuits Conference, Sevilla, 2010. 314–317

    Google Scholar 

  18. Zhao D, Kulkarni S, Reynaert P. A 60 GHz dual-mode power amplifier with 17.4 dBm output power and 29.3% PAE in 40-nm CMOS. In: Proceedings of IEEE European Solid State Circuits Conference, Bordeaux, 2012. 337–340

    Google Scholar 

  19. Kulkarni S, Reynaert P. A push-pull mm-wave power amplifier with <0.8? AM-PM distortion in 40 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2014. 252–253

    Google Scholar 

  20. Larie A, Kerherve E, Martineau B, et al. A 1.2 V 20 d Bm 60 GHz power amplifier with 32.4 dB Gain and 20% Peak PAE in 65 nm CMOS. In: Proceedings of IEEE European Solid State Circuits Conference, Venice, 2014. 175–178

    Google Scholar 

  21. Wang K Y, Chang T Y, Wang C K. A 1 V 19.3 dBm 79 GHz power amplifier in 65 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2012. 260–262

    Google Scholar 

  22. Lai J W, Valdes-Garcia A. A 1 V 17.9 dBm 60 GHz power amplifier in standard 65 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2010. 424–425

    Google Scholar 

  23. Zhao D, Reynaert P. 14.1 A 0.9 V 20.9 dBm 22.3%-PAE E-band power amplifier with broadband parallel-series power combiner in 40 nm CMOS. In: Proceedings of IEEE International Solid-State Circuits Conference, San Francisco, 2014. 248–249

    Google Scholar 

  24. Aloui S, Leite B, Demirel N, et al. High-gain and linear 60-GHz power amplifier with a thin digital 65-nm CMOS technology. IEEE Trans Microw Theory Tech, 2013, 61: 2425–2437

    Article  Google Scholar 

  25. Thian M, Tiebout M, Buchanan N B, et al. A 76–84 GHz SiGe power amplifier array employing low-loss four-way differential combining transformer. IEEE Trans Microw Theory Tech, 2013, 61: 931–938

    Article  Google Scholar 

  26. Shirinfar F, Nariman M, Sowlati T, et al. A fully integrated 22.6 dBm mm-Wave PA in 40 nm CMOS. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Seattle, 2013. 279–282

    Google Scholar 

  27. Pfeiffer U R, Goren D. A 23-dBm 60-GHz distributed active transformer in a silicon process technology. IEEE Trans Microw Theory Tech, 2007, 55: 857–865

    Article  Google Scholar 

  28. Guo K, Huang P, Kang K. A 60-GHz 1.2 V 21 dBm power amplifier with a fully symmetrical 8-way transformer power combiner in 90 nm CMOS. In: Proceedings of IEEE MTT-S International Microwave Symposium, Tampa, 2014. 1–3

    Google Scholar 

  29. Huang P, Guo K, Yu Y, et al. A 21.08 dBm Q-band power amplifier in 90-nm CMOS process. In: Proceedings of IEEE International Wireless Symposium, Xi’an, 2014. 1–4

    Google Scholar 

  30. Wang T, Mitomo T, Ono N, et al. A 55–67 GHz power amplifier with 13.6% PAE in 65 nm standard CMOS. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Baltimore, 2011. 1–4

    Google Scholar 

  31. Zhao J, Bassi M, Bevilacqua A, et al. A 40–67 GHz power amplifier with 13 dBm PSAT and 16% PAE in 28 nm CMOS LP. In: Proceedings of IEEE European Solid State Circuits Conference, Venice, 2014. 179–182

    Google Scholar 

  32. Medra A, Giannini V, Guermandi D, et al. A 79 GHz variable gain low-noise amplifier and power amplifier in 28 nm CMOS operating up to 120?C. In: Proceedings of IEEE European Solid State Circuits Conference, Venice, 2014. 183–186

    Google Scholar 

  33. Ogunnika O T, Valdes-Garcia A. A 60 GHz Class-E tuned power amplifier with PAE >25% in 32 nm SOI CMOS. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Montreal, 2012. 65–68

    Google Scholar 

  34. Aoki I, Kee S D, Rutledge D B, et al. Distributed active transformer-a new power-combining and impedancetransformation technique. IEEE Trans Microw Theory Tech, 2002, 50: 316–331

    Article  Google Scholar 

  35. Aoki I, Kee S D, Rutledge D B, et al. Fully integrated CMOS power amplifier design using the distributed activetransformer architecture. IEEE J Solid-State Circ, 2002, 37: 371–383

    Article  Google Scholar 

  36. Li Y, Li Z, Uyar O, et al. High-throughput signal component separator for asymmetric multi-level outphasing power amplifiers. IEEE J Solid-State Circ, 2013, 48: 369–380

    Article  Google Scholar 

  37. Zhao D, Reynaert P. An E-band power amplifier with broadband parallel-series power combiner in 40-nm CMOS. IEEE Trans Microw Theory Tech, 2015, 63: 683–690

    Article  Google Scholar 

  38. Zhao D. A 40-nm CMOS E-band 4-way power amplifier with neutralized bootstrapped cascode amplifier and optimum passive circuits. IEEE Trans Microw Theory Tech, 2015, 63: 1–7

    Google Scholar 

  39. Kang K, Brinkhoff J, Shi J, et al. On-chip coupled transmission line modeling for millimeter-wave applications using four-port measurements. IEEE Trans Adv Pack, 2010, 33: 153–159

    Article  Google Scholar 

  40. Kang K, Nan L, Rustagi S C, et al. A Wideband scalable and SPICE-compatible model for on-chip interconnects up to 110 GHz. IEEE Trans Microw Theory Tech, 2008, 56: 942–951

    Article  Google Scholar 

  41. Pozar D M. Microwave and RF Wireless Systems. Hoboken: John Wiley, 2001. 1–384

    Google Scholar 

  42. Huang P, Chen Y, Guo K, et al. Design and modeling of an on-chip asymmetric tap balun for CMOS millimeter-wave circuits. In: Proceedings of IEEE International Wireless Symposium, Xi’an, 2014. 1–4

    Google Scholar 

  43. Zhao D, Reynaert P. A 60-GHz Dual-mode class AB power amplifier in 40-nm CMOS. IEEE J Solid-State Circ, 2013, 48: 2323–2337

    Article  Google Scholar 

  44. Zhao D, Kulkarni S, Reynaert P. A 60-GHz outphasing transmitter in 40-nm CMOS. IEEE J Solid-State Circ, 2012, 47: 3172–3183

    Article  Google Scholar 

  45. Kim J, Dabag H, Asbeck P, et al. Q-band and W-band power amplifiers in 45-nm CMOS SOI. IEEE Trans Microw Theory Tech, 2012, 60: 1870–1877

    Article  Google Scholar 

  46. Dabag H T, Kim J, Larson L E, et al. A 45-GHz SiGe HBT amplifier at greater than 25% efficiency and 30 mW output power. In: Proceedings of IEEE Bipolar/bicmos Circuits and Technology Meeting, Atlanta, 2011. 25–28

    Google Scholar 

  47. Agah A, Dabag H, Hanafi B, et al. A 34% PAE, 18.6 dBm 42–45 GHz stacked power amplifier in 45 nm SOI CMOS. In: Proceedings of IEEE Radio Frequency Integrated Circuits Symposium, Montreal, 2012. 57–60

    Google Scholar 

  48. Wei T, Carley L R, Ricketts D S. A Q-band SiGe power amplifier with 17.5 dBm saturated output power and 26% peak PAE. In: Proceedings of IEEE Bipolar/bicmos Circuits and Technology Meeting, Atlanta, 2011. 146–149

    Google Scholar 

  49. Tsai J H, Lee Y L, Huang T W, et al. A 90-nm CMOS broadband and miniature Q-band balanced medium power amplifier. In: Proceedings of IEEE MTT-S International Microwave Symposium, Honolulu, 2007. 1129–1132

    Google Scholar 

Download references

Acknowledgments

This work was supported by National Natural Science Foundation of China (Grant Nos. 61331006, 61422104), National Science and Technology Major Project of the Ministry of Science and Technology of China (Grand No. 2016ZX03001015-004), and National High Technology Research and Development Program of China (863) (Grand No. 2015AA01A704).

Author information

Authors and Affiliations

  1. School of Electronic Engineering, University of Electronic Science and Technology of China, Chengdu, 611731, China

    Zhengdong Jiang, Kaizhe Guo, Peng Huang, Chenxi Zhao, Yongling Ban & Kai Kang

  2. College of Electronics and Information, Hangzhou Dianzi University, Hangzhou, 310018, China

    Jun Liu

  3. Department of Electrical and Computer Engineering, Ohio State University, Columbus, 43210, USA

    Yiming Fan

Authors
  1. Zhengdong Jiang
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. Kaizhe Guo
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. Peng Huang
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. Yiming Fan
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. Chenxi Zhao
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Yongling Ban
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. Jun Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. Kai Kang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Kai Kang.

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Jiang, Z., Guo, K., Huang, P. et al. 45-GHz and 60-GHz 90 nm CMOS power amplifiers with a fully symmetrical 8-way transformer power combiner. Sci. China Inf. Sci. 60, 080303 (2017). https://doi.org/10.1007/s11432-016-9102-0

Download citation

  • Received:

  • Accepted:

  • Published:

  • DOI: https://doi.org/10.1007/s11432-016-9102-0

Keywords

Search

Navigation