Abstract
In this work, an idea which applies binary alloy nanocrystal floating gate to nonvolatile memory application was introduced. The relationship between binary alloy’s work function and its composition was discussed theoretically. A nanocrystal floating gate structure with NiFe nanocrystals embedded in SiO2 dielectric layers was fabricated by magnetron sputtering. The micro-structure and composition deviation of the prepared NiFe nanocrystals were also investigated by TEM and EDS.
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Wang, L., Sun, H., Zhou, H. et al. Preparation of NiFe binary alloy nanocrystals for nonvolatile memory applications. Sci. China Technol. Sci. 53, 2320–2322 (2010). https://doi.org/10.1007/s11431-010-4041-1
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DOI: https://doi.org/10.1007/s11431-010-4041-1