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A High Vacuum Fracture Facility for Molecular Interactions

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Abstract

This paper describes the development of a high vacuum fracture rig for delaminating functionalized silicon surfaces. The main focus here is on examining molecular interactions by functionalizing the silicon surfaces with carboxyl and diamine terminated self-assembled monolayers (SAMs). However, many other interactions can be considered. The crack front location and normal crack opening displacements (NCOD) are measured by infrared crack opening interferometry (IR-COI). This allows the normal traction-separation relation of the interactions to be determined. Some mixed-mode fracture experiments were conducted on silicon/carboxyl/diamine/silicon sandwich specimens in ambient and high vacuum. Interesting differences in behavior were noted.

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Acknowledgements

This work was supported by the Department of Energy (Grant No. DE-FG02-06ER46303). Boris Doynov, an undergraduate research assistant with the group, was very effective in assisting with SAM deposition and diagnostics. Several members of the Chemistry and Biochemistry Department at UT Austin were extremely helpful. In particular, the authors would like to thank Ben Hahn and Dr. Yangming Sun for their generous support and advice with the XPS measurements. All ellipsometry measurements were kindly performed by Alan May, while he was a PhD student in Professor Stevenson’s group.

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Authors and Affiliations

  1. Research Center for the Mechanics of Solids, Structures and Materials, The University of Texas at Austin, Austin, TX, 78712, USA

    K. M. Liechti, S. R. Na & M. Wakamatsu

  2. Department of Materials Science and Engineering, The University of Texas at Dallas, Richardson, TX, 75080, USA

    O. Seitz & Y. Chabal

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  1. K. M. Liechti
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  2. S. R. Na
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  3. M. Wakamatsu
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  4. O. Seitz
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  5. Y. Chabal
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Correspondence to K. M. Liechti.

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Liechti, K.M., Na, S.R., Wakamatsu, M. et al. A High Vacuum Fracture Facility for Molecular Interactions. Exp Mech 53, 231–241 (2013). https://doi.org/10.1007/s11340-012-9625-1

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  • DOI: https://doi.org/10.1007/s11340-012-9625-1

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