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Effect of Palladium Additives on the Functional Characteristics of Semiconductor Hydrogen Sensors Based on Nanosized SnO2

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Theoretical and Experimental Chemistry Aims and scope

A study was carried out on the effect of palladium additives to nanosized stannic oxide on the electrical resistance in air and hydrogen, sensitivity to H2, and the response and relaxation time of sensors containing the nanosized semiconductor, Pd/SnO2. The introduction of palladium leads to enhanced sensitivity of the sensors to H2 and improved response and recovery time.

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Authors and Affiliations

  1. Taras Shevchenko National University of Kyiv, Vul. Volodymyrs’ka, 64, Kyiv, 01601, Ukraine

    L. P. Oleksenko, N. P. Maksymovych, E. V. Sokovykh & I. P. Matushko

Authors
  1. L. P. Oleksenko
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  2. N. P. Maksymovych
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  3. E. V. Sokovykh
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  4. I. P. Matushko
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Corresponding author

Correspondence to L. P. Oleksenko.

Additional information

Translated from Teoreticheskaya i Éksperimental’naya Khimiya, Vol. 50, No. 2, pp. 113-118, March-April, 2014.

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Oleksenko, L.P., Maksymovych, N.P., Sokovykh, E.V. et al. Effect of Palladium Additives on the Functional Characteristics of Semiconductor Hydrogen Sensors Based on Nanosized SnO2 . Theor Exp Chem 50, 115–120 (2014). https://doi.org/10.1007/s11237-014-9355-9

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  • DOI: https://doi.org/10.1007/s11237-014-9355-9

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