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Readout Circuits for Noise Compensation in ISFET Sensory System

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Abstract

This paper presents two different noise reduction techniques for ion sensitive field effect transistor (ISFET) readout configuration and their comparison. The proposed circuit configurations are immune to the noise generated from the ISFET sensory system and particularly to the low frequency pH dependent 1/f electrochemical noise. The methods used under this study are compensation of noise by differential OPAMP based and Wheatstone bridge circuit, where two identical commercial ISFET sensors were used. The statistical and frequency analysis of the data generated by this two methods were compared for different pH value ranging from pH 2 to 10 at room temperature, and it is found that the readout circuits are able to compensate the noise to a great extent.

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  1. Department of Electronic and Communication Engineering, Tezpur University, Tezpur, 784028, Assam, India

    M. P. Das, M. Bhuyan & C. Talukdar

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  1. M. P. Das
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  2. M. Bhuyan
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Correspondence to M. P. Das.

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Das, M.P., Bhuyan, M. & Talukdar, C. Readout Circuits for Noise Compensation in ISFET Sensory System. Sens Imaging 16, 1 (2015). https://doi.org/10.1007/s11220-014-0103-y

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