Admittance of MIS structures based on graded-gap n-Hg1–х Cd х Te (x = 0.31–0.32) grown by molecular beam epitaxy (MBE) is investigated in a wide temperature range (8–300 K). It is shown that the temperature and frequency dependences of the differential resistance of space charge region for structures with a graded-gap layer are qualitatively similar to those for structures without a graded-gap layer. It is found that for MIS structures based on MBE n-Hg1–х Cd х Te (x = 0.31–0.32), regardless of the presence of a graded-gap layer, the differential resistance of space charge region is limited by the processes of Shockley-Read generation in the temperature range of 25–100 K.
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References
A. Rogal’skii, Infrared Detectors [in Russian], Nauka, Novosibirsk (2003).
J. Сhu and A. Sher, Device Physics of Narrow Gap Semiconductors, Springer (2010).
A. V. Voitsekhovskii and V. N. Davydov, Photoelectric MIS Structures Based on Narrow-Gap Semiconductors [in Russian], Radio i Svyas, Tomsk (1990).
V. V. Vasil’ev and Yu. P. Mashukov, Prikladn. Fiz., No. 4, 106–110 (2010).
V. N. Ovsyuk and A. V. Yartsev, Proc. SPIE, 6636, 663617–663621 (2007).
V. N. Ovsyuk and A. V. Yartsev, Prikladn. Fiz., No. 5, 80–83 (2007).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Russ. Phys. J., 49, No. 10, 1127–1129 (2006).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Russ. Phys. J., 55, No. 8, 917–924 (2013).
M. A. Kinch, Semicond. Semimet., 18 313–385 (1981).
V. N. Ovsyuk, G. L. Kuryshev, Yu. G. Sidorov, et al., Infrared Photodetector Arrays [in Russian], Nauka, Novosibirsk (2001).
V. V. Antonov, Investigation of Electrophysical and Photoelectric Characteristics of MIS Structures Based on Mercury Cadmium Telluride, Thesis of Cand. Phys.-Math. Sci. [in Russian], Tomsk (1985).
A. A. Guzev, V. S. Varavin, S. A. Dvoretskii, et al., Prikladn. Fiz., No. 2, 92–96 (2009).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Fiz. Tekh. Poluprovodn., 42, No. 11, 1327–1332 (2008).
A. V. Voitsekhovskii, S. N. Nesmelov, S. M. Dzyadukh, et al., Opto-Electron. Rev., 18, No. 3, 259–262 (2010).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Thin Solid Films, 522, 261–266 (2012).
A. V. Voitsekhovskii, S. N. Nesmelov, and S. M. Dzyadukh, Thin Solid Films, 551, 92–97 (2014).
V. V. Vasil’ev and Yu. P. Mashukov, Fiz. Tekh. Poluprovodn., 41, No. 1, 38–43 (2007).
W. He and Z. Celik-Butler, Solid-State Electron., 39, No. 1, 127–132 (1996).
M. W. Goodwin, M. A. Kinch, and R. J. Koestner, J. Vac. Sci. Technol., A7, No. 2, 523–527 (1989).
M. J. Yang, C. H. Yang, M. A. Kinch, and J. D. Beck, Appl. Phys. Lett., 54, No. 3, 265–267 (1989).
M. Zvara, R. Grill, P. Hlidek, et al., Semicond. Sci. Tecnol., No. 10, 1145–1150 (1995).
17. M. Zvara, R. Grill, P. Hlidek, et al., Semicond. Sci. Tecnol., No. 11, 1718–1724 (1996).
M. W. Goodwin, M. A. Kinch, and R. J. Koestner, J. Vac. Sci. Technol., A7, No. 2, 523–527 (1989).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 62–69, May, 2014.
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Voitsekhovskii, A.V., Nesmelov, S.N., Dzyadukh, S.М. et al. Special Features of Admittance in Mis Structures Based on Graded-Gap MBE n-Hg1–x Cd x Te (x = 0.31–0.32) in a Temperature Range OF 8–300 K. Russ Phys J 57, 633–641 (2014). https://doi.org/10.1007/s11182-014-0286-7
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DOI: https://doi.org/10.1007/s11182-014-0286-7