Results of investigations of the SiC/Si growth from monomethylsilane are reported. Growth conditions favoring the rotated epitaxy of 3C-SiC(111) films on Si(110) are determined experimentally. Surface energies of clean and hydrogen covered 3C-SiC(110) and 3C-SiC(111) surfaces are calculated with the density functional theory approach. It is shown that the change of the 3C-SiC film orientation with decreasing surface temperature and increasing monomethylsilane pressure may be induced by a reduction of the surface energy anisotropy due to the surface passivation by hydrogen.
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp. 106–111, December, 2013.
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Sambonsuge, S., Nikitina, L.N., Hervieu, Y.Y. et al. Silicon Carbide on Silicon (110): Surface Structure and Mechanisms of Epitaxial Growth. Russ Phys J 56, 1439–1444 (2014). https://doi.org/10.1007/s11182-014-0197-7
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DOI: https://doi.org/10.1007/s11182-014-0197-7