A physical model and program of calculating the parameters of charging dielectrics by electron bombardment is described. A method of computer simulation is used to investigate the main processes of charging the subsurface silicon dioxide layers. Dependences of the current density, volume charge density, and electric field strength on the material layer depth are calculated for variable electron beam parameters, irradiation time, and grid potential near the sample surface.
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H.-J. Fitting, H. Glaefeke, W. Wild, et al., Exper. Tech. Phys., 27, No. 13, 13–24 (1979).
H.-J. Fitting, E. Schreiber, and I. A. Glavatskikh, Microsc. Microanal., 10, 764–770 (2004).
I. A. Glavatskikh, V. S. Kortov, and H.-J. Fitting, J. Appl. Phys., 89, No. 1, 440–448 (2001).
H.-J. Fitting, Elektronenstrahlinduzierte Ladungstrager in Festkorper Targets, Dissertation zur Erlangung des Akademischen Grades Doktor der Wissenschaften, Wilhelm, Pieck Universitat, Rostock (1978).
H.-J. Fitting, H. Glaefeke, and W. Wild, Phys. Status Solidi (a), 43, No. 1, 185–190 (1977).
H.-J. Fitting, Phys. Status Solidi (a), 26, 525–535 (1974).
R. C. Alig and S. Bloom, Phys. Rev. Lett., 35, 1522–1525 (1975).
J. Frenkel, Phys. Rev., 54, 647 (1938).
I. A. Glavatskikh, Special features of electron transport and emission for surface charging of silicon dioxide by an electron beam, Candidate’s Dissertation in Physical and Mathematical Sciences, Ekaterinburg (2002).
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Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 3, pp. 25–31, March, 2011.
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Kortov, V.S., Zvonarev, S.V. & Spiridonova, T.V. Computer simulation of charging the silicon dioxide surface and subsurface layers by electron bombardment. Russ Phys J 54, 288–295 (2011). https://doi.org/10.1007/s11182-011-9613-4
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DOI: https://doi.org/10.1007/s11182-011-9613-4