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Atomic and electronic structures of GaAs (001) surface

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Abstract

The atomic and electronic structures of α, β, β2, and ζ reconstructions for the Ga-terminated GaAs (001)-(4×2) surface are investigated in the framework of the pseudopotential approach. Total, surface, and local densities of electron states, electron-energy spectra, and relative surface energies of the structures under consideration are calculated.

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Authors and Affiliations

  1. Institute of Strength Physics and Materials Science of the Siberian Branch of the Russian Academy of Sciences, Russia

    S. E. Kulkova & S. V. Eremeev

  2. Laboratoire de Physique des Miliex Denses, Institute of Metal Physics of the Urals Branch of the Russian Academy of Sciences, Paul Verlain University-Institute de Physique Electronique et Chimie, France

    A. V. Postnikov

  3. M. V. Lomonosov Moscow State University, Russia

    D. I. Bazhanov

  4. Kinetic Technologies Ltd., Russia

    B. V. Potapkin

Authors
  1. S. E. Kulkova
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  2. S. V. Eremeev
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  3. A. V. Postnikov
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  4. D. I. Bazhanov
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  5. B. V. Potapkin
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__________

Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 44–52, October, 2006.

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Kulkova, S.E., Eremeev, S.V., Postnikov, A.V. et al. Atomic and electronic structures of GaAs (001) surface. Russ Phys J 49, 1088–1096 (2006). https://doi.org/10.1007/s11182-006-0227-1

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  • DOI: https://doi.org/10.1007/s11182-006-0227-1

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