Abstract
A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu3Se2) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.
REFERENCES
Haram, S.K., Santhanam, K.S.V., Neumann-Spallart, M. and Levy-Clement, C., Mater. Res. Bull., 1992, vol. 27, p. 1185.
Padam, G.K., Thin Solid Films, 1987, vol. 150, p. L89.
Levy-Clement, C., Neumann-Spallart, M., Haram, S.K. and Santhanam, K.S.V., Thin Solid Films, 1997, vol. 302, p. 12.
Toneje, A. and Toneje, A.M., J. Solid State Chem., 1981, vol. 39, p. 259.
Shafizade, R.B., Ivanova, I.V. and Kazinets, M.M., Thin Solid Films, 1976, vol. 35, p. 169.
Kashida, S. and Akai, J., J. Phys. C: Solid State Phys., 1988, vol. 21, p. 5329.
Estrada, C.A., Nair, P.K., Nair, M.T.S., Zingaro, R.A., and Meyers, E.A., J. Electrochem. Soc., 1994, vol. 141, p. 802.
Mondal, A. and Pramanik, P., J. Solid State Chem., 1983, vol. 47, p. 81.
Mondal, A. and Pramanik, P., J. Solid State Chem., 1984, vol. 55, p. 116.
Shafizade, R.B., Ivanova, I.V., and Kazinets, M.M., Thin Solid Films, 1978, vol. 55, p. 211.
Chen, W.S., Stewart, J.M., Mickelson, R.A., Appl. Phys. Lett., 1985, vol. 46, p. 1095.
Okimura, H., Matsumae, T., and Makabe, R., Thin Solid Films, 1980, vol. 71, p. 53.
Korzhuev, M.A., Phys. Solid State, 1998, vol. 40, p. 217.
Lakshmi, M., Bindu, K., Bini, S., Vijayakumar, K.P., Sudha Kartha C., Abe, T., and Kashiwaba, Y., Thin Solid Films, 2001, vol. 386, p. 127.
Baeck, S.H., Choi, K.S., Jaramillo, T.F., Stucky, G.D., and McFarland, E.W., Adv. Mater., 2003, vol. 15, p. 1269.
Fernando, C.A.N. and Wetthasinghe, S.K., Sol. Energy Mater. Sol. Cells, 2000, vol. 63, p. 299.
Peng, K.Q. and Zhu, J., Electrochimica Acta, 2004, vol. 49, p. 2563.
Iacovangelo, C.D. and Zarnoch, K.P., J. Electrochem. Soc., 1991, vol. 138, p. 983.
Lee, M.K., Wang, J.J. and Wang, H.D., J. Electrochem. Soc., 1997, vol. 144, p. 1777.
Kato, M., Sato, J., Otani, H., Homma, T., Okinaka, Y., Osaka, T., and Yoshioka, O., J. Electrochem. Soc., 2002, vol. 149, p. C164.
Poter, L.A.J., Choi, H.C., Ribbe, A.E., and Buriak, J.M., Nano Lett., 2002, vol. 2, p. 1067.
O'Brien, R.N. and Santhanam, K.S.V., J. Electrochem. Soc., 1992, vol. 139, p. 434.
Balashova, N.A., Eletskii, V.V., and Medyntsev, V.V., Elektrokhimiya, 1965, vol. 1, p. 274.
Haram, S.K. and Santhanam, K.S.V., Mater. Res. Bull., 1992, vol. 27, p. 1185.
Kazacos, M.S. and Miller, B., J. Electrochem. Soc., 1980, vol. 127, p. 869.
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From Elektrokhimiya, Vol. 41, No. 11, 2005, pp. 1391–1394.
Original English Text Copyright © 2005 by Yang, He.
The text was submitted by the authors in English.
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Yang, Y.J., He, L.Y. Novel Electroless Deposition of Cu3Se2 Film on Silicon Substrate by a Simple Galvanic Displacement Process. Russ J Electrochem 41, 1241–1243 (2005). https://doi.org/10.1007/s11175-005-0209-6
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DOI: https://doi.org/10.1007/s11175-005-0209-6