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Novel Electroless Deposition of Cu3Se2 Film on Silicon Substrate by a Simple Galvanic Displacement Process

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Abstract

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu3Se2) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.

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Correspondence to Y. J. Yang.

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From Elektrokhimiya, Vol. 41, No. 11, 2005, pp. 1391–1394.

Original English Text Copyright © 2005 by Yang, He.

The text was submitted by the authors in English.

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Yang, Y.J., He, L.Y. Novel Electroless Deposition of Cu3Se2 Film on Silicon Substrate by a Simple Galvanic Displacement Process. Russ J Electrochem 41, 1241–1243 (2005). https://doi.org/10.1007/s11175-005-0209-6

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  • DOI: https://doi.org/10.1007/s11175-005-0209-6

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