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Synthetic diamond electrodes: Photoelectrochemical behavior of vacuum-annealed undoped polycrystalline diamond films

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Abstract

The photocurrent and photopotential for undoped polycrystalline diamond film electrodes prepared by chemical vapor deposition and annealed in vacuum at 1500–1640°C are measured. The “metal-like” samples (annealed at ≥1630°C) have a negligible photosensitivity. Judging from the positive sign of the photopotential and the cathodic direction of the photocurrent, the material under study formally behaves as a p-type semiconductor. The photoeffects are presumably caused by structure defects, in particular, the dislocations in diamond crystallites formed close to intercrystalline boundaries during the high-temperature annealing.

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REFERENCES

  1. Pleskov, Yu.V., Krotova, M.D., Ralchenko, V.G., Khomich, A.V., and Khmelnitsky, R.A., Elektrokhimiya, 2003, vol. 39, p. 886.

    Google Scholar 

  2. Nistor, L., Ralchenko, V., Vlasov, I., Khomich, A., Khmelnitskii, R., Potapov, P., and Van Landuyt, J., Phys. Status Solidi A, 2001, vol. 186, p. 207.

    Google Scholar 

  3. Ralchenko, V.G., Smolin, A.A., Konov, V.I., Sergeichev, K.F., Sychov, I.A., Vlasov, I.I., Migulin, V.V., Voronina, S.V., and Khomich, A.V., Diamond Relat. Mater., 1997, vol. 6, p. 417.

    Google Scholar 

  4. Pleskov, Yu.V., Sakharova, A.Ya., Krotova, M.D., Bouilov, L.L., and Spitsyn, B.V., J. Electroanal. Chem., 1987, vol. 228, p. 19.

    Google Scholar 

  5. Gurevich, Yu.Ya. and Pleskov, Yu.V., Fotoelektrokhimiya poluprovodnikov (The Semiconductor Photoelectrochemistry), Moscow: Nauka, 1983.

    Google Scholar 

  6. Nebel, C.E., Semicond. Sci. Technol., 2003, vol. 18, p. S11.

    Google Scholar 

  7. Ralchenko, V., Nistor, L., Pleuler, E., Khomich, A., Vlasov, I., and Khmelnitskii, R., Diamond Relat. Mater., 2003, vol. 12, p. 1964.

    Google Scholar 

  8. Rossi, M.C., Salvatori, S., and Galuzzi, F., Proc. 5th Int. Symp. on Diamond Materials, Pennington (NJ): The Electrochemical Soc., 1998, vol. 97-32, p. 255.

    Google Scholar 

  9. Van Enkevort, W.J.P., Synthetic Diamond, Spear, K.E. and Dismukes, J.P., Eds., New York: Wiley, 1994, p. 307.

    Google Scholar 

  10. Souw, E.-K, Meilunas, R.J., Szeles, C., Ravindra, N.M., and Tong, F.-M., Diamond Relat. Mater., 1997, vol. 6, p. 1157.

    Google Scholar 

  11. Nistor, L., Stefan, M., Ralchenko, V., Khomich, A., and Schoemaker, D., J. Appl. Phys., 2000, vol. 87, p. 8741.

    Google Scholar 

  12. Weerdt, F.D. and Royen, J.V., Diamond Relat. Mater., 2001, vol. 10, p. 474.

    Google Scholar 

  13. Roher, E., Nebel, C.E., Stutzmann, M., Floter, A., Zachai, R., Jiang, X., and Klages C.-P., Diamond Relat. Mater., 1998, vol. 7, p. 879.

    Google Scholar 

  14. Manfredotti, C., Vittone, E., Fizzotti, F., Lo Giudice, A., and Paolini C., Diamond Relat. Mater., 2002, vol. 11, p. 446.

    Google Scholar 

  15. Khomich, A., Ralchenko, V., Vlasov, A., Khmelnitskii, R., Vlasov, I., and Konov V., Diamond Relat. Mater., 2001, vol. 10, p. 546.

    Google Scholar 

  16. Pereira, L., Pereira, E., and Gomes, H., Diamond Relat. Mater., 2000, vol. 9, p. 1621.

    Google Scholar 

  17. Steeds, J.W., Gilmore, A., Bussmann, K.M., Butler, J.E., and Koidl, P., Diamond Relat. Mater., 1999, vol. 8, p. 996.

    Google Scholar 

  18. Pleskov, Yu.V., Krotova, M.D., Ralchenko, V.G., Khomich, A.V., and Khmelnitsky, R.A., Electrochim. Acta., 2003, vol. 49, p. 41.

    Google Scholar 

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Authors and Affiliations

  1. Frumkin Institute of Electrochemistry, Russian Academy of Sciences, Leninskii pr. 31, 119071, Moscow, Russia

    Yu. V. Pleskov & M. D. Krotova

  2. Prokhorov Institute of General Physics, Russian Academy of Sciences, ul. Vavilova 38, 119991, Moscow, Russia

    V. G. Ralchenko

  3. Institute of Radio Engineering and Electronics, Russian Academy of Sciences, pl. Vvedenskogo 1, 141190, Fryazino, Russia

    A. V. Khomich

  4. Lebedev Physical Institute, Russian Academy of Sciences, Leninskii pr. 53, 117924, Moscow, Russia

    R. A. Khmelnitskii

Authors
  1. Yu. V. Pleskov
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  2. M. D. Krotova
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  3. V. G. Ralchenko
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  4. A. V. Khomich
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  5. R. A. Khmelnitskii
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Correspondence to Yu. V. Pleskov.

Additional information

Translated from Elektrokhimiya, Vol. 41, No. 3, 2005, pp. 343–349.

Original Russian Text Copyright © 2005 by Pleskov, Krotova, Ralchenko, Khomich, Khmelnitskii.

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Pleskov, Y.V., Krotova, M.D., Ralchenko, V.G. et al. Synthetic diamond electrodes: Photoelectrochemical behavior of vacuum-annealed undoped polycrystalline diamond films. Russ J Electrochem 41, 304–309 (2005). https://doi.org/10.1007/s11175-005-0066-3

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  • DOI: https://doi.org/10.1007/s11175-005-0066-3

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