Abstract
We have fabricated a three-dimensional (3D) nanostructured indium tin oxide (ITO) film in which the spaces were filled by use of a Cu, In, and Ga precursor solution. This solution has potential for use in bulk heterojunction CuIn x Ga1−x S2 (CIGS) thin-film solar cells. ITO nanorod films ~700 nm thick on glass substrates were synthesized by radio-frequency magnetron sputtering deposition. To ensure complete filling of the gaps in ITO nanorod films, a polymeric binder-free precursor solution was used. In addition, a two-step heating process (oxidation and sulfurization) was used after coating of the precursor solution to make a CIGS absorber film with a minimum of carbon impurities. Superstrate-type solar cell devices with 3D nanostructured films (CIGS–ITO) had a photovoltaic efficiency of 1.11 % despite the absence of a buffer layer (e.g. CdS) between the CIGS and ITO.
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Acknowledgments
This work was supported by a National Research Foundation of Korea grant (NRF-2009-C1AAA001-0092935 and 2011-0017449) and partly by a National Research Foundation of Korea grant funded by the Korean Government (MEST)” (2012, University–Institute Cooperation Program).
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Chu, V.B., Cho, J.W., Park, S.J. et al. Use of a precursor solution to fill the gaps between indium tin oxide nanorods, for preparation of three-dimensional CuInGaS2 thin-film solar cells. Res Chem Intermed 40, 49–56 (2014). https://doi.org/10.1007/s11164-013-1454-z
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DOI: https://doi.org/10.1007/s11164-013-1454-z