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Effect of near surface inverse doping on graphene silicon heterojunction solar cell

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Abstract

Two dimensional model of graphene silicon heterojunction solar cell with an inverse doped surface layer is structured using Silvaco TCAD tools by accurate control of ion implantation parameters such as ion beam energy and implantation dose. The I–V characteristics show that the performance of solar cell strongly depends on the inverse layer and doping concentrations. Due to the increase of effective barrier height, the collecting rate of minority carrier generated deep in silicon crystal is enhanced, which is shown by hole current density distribution at Y direction and evidenced by IQE analyses. The obtained maximum efficiency is 0.7332 % at implantation dose of 1e15 cm−2, which is improved significantly compared with normal structure.

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Acknowledgments

The project was supported by research fund of Jiangsu Province Cultivation base for State Key Laboratory of Photovoltaic Science and Technology (No. SKLPSTKF201505), National Natural Science Foundation of China (Nos. 61306122, 61404012, 11347021).Thanks are also given to The Shanghai Institute of Technical Physics (SITP) for software support.

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Authors and Affiliations

  1. Jiangsu Province Cultivation Base for State Key Laboratory of Photovoltaic Science and Technology, Changzhou University, Changzhou, 213164, China

    Yawei Kuang

  2. School of Physics and Electronic Engineering, Changshu Institute of Technology, Changshu, 215500, China

    Yawei Kuang, Debao Zhang, Yulong Ma, Yushen Liu, Zhenguang Shao, Xuekun Hong, Xifeng Yang & Jinfu Feng

  3. Centre for Optical and Electromagnetic Research, Zhejiang University, Hangzhou, 310058, China

    Yawei Kuang

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  1. Yawei Kuang
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  2. Debao Zhang
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Correspondence to Debao Zhang.

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Kuang, Y., Zhang, D., Ma, Y. et al. Effect of near surface inverse doping on graphene silicon heterojunction solar cell. Opt Quant Electron 48, 199 (2016). https://doi.org/10.1007/s11082-016-0471-8

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