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Phototransistor noise model based on noise measurements on PNP PIN phototransistors

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Abstract

A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted.

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Acknowledgments

Funding from the Austrian Science Fund (FWF) in the project P21373-N22 is acknowledged.

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Authors and Affiliations

  1. Vienna University of Technology, Gusshausstr. 25-27/E354, 1040 , Vienna, Austria

    Wolfgang Gaberl, Plamen Kostov, Michael Hofbauer & Horst Zimmermann

Authors
  1. Wolfgang Gaberl
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  2. Plamen Kostov
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  3. Michael Hofbauer
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  4. Horst Zimmermann
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Corresponding author

Correspondence to Wolfgang Gaberl.

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Gaberl, W., Kostov, P., Hofbauer, M. et al. Phototransistor noise model based on noise measurements on PNP PIN phototransistors. Opt Quant Electron 46, 1269–1275 (2014). https://doi.org/10.1007/s11082-013-9839-1

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  • DOI: https://doi.org/10.1007/s11082-013-9839-1

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