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Simulation of all-optical logic XNOR gate based on quantum-dot semiconductor optical amplifiers with amplified spontaneous emission

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Abstract

The performance of all-optical logic XNOR gate has been simulated. XNOR operation is realized by using Mach–Zehnder interferometer utilizing semiconductor optical amplifiers (SOAs) with quantum-dot (QD) active region. The study is carried out when the amplified spontaneous emission (ASE) is included. Nonlinear dynamics including carrier heating and spectral hole-burning in the QD–SOA are taken into account together with the rate equations in order to realize the all-optical logic XNOR operation. Results show that the XNOR gate is capable of operating at data speed of 250 Gb/s with high output quality factor (\(Q\)-factor). The dependence of the output \(Q\)-factor on signals and QD–SOAs parameters is also investigated and discussed.

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Acknowledgments

The authors would like to thank the editor of the journal and anonymous referees for the important comments that helped us to improve the content of this paper.

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Authors and Affiliations

  1. Department of Physics, Faculty of Science, Fayoum University, Fayoum, 63514, Egypt

    A. Kotb

  2. Department of Physics, College of Science, Northern Borders University, Arar, 1321, KSA

    A. Kotb

  3. Lightwave Communications Research Group, Department of Electrical and Computer Engineering, School of Engineering, Democritus University of Thrace, 67100 , Xanthi, Greece

    K. E. Zoiros

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Correspondence to A. Kotb.

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Kotb, A., Zoiros, K.E. Simulation of all-optical logic XNOR gate based on quantum-dot semiconductor optical amplifiers with amplified spontaneous emission. Opt Quant Electron 45, 1213–1221 (2013). https://doi.org/10.1007/s11082-013-9742-9

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  • DOI: https://doi.org/10.1007/s11082-013-9742-9

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