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Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes

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Abstract

In this paper, the transition wavelength and wave function overlap of type-II InxGa1-xAs/GaAs1-ySby quantum wells are numerically calculated using a 4-band k · p Hamiltonian model. The simulation results indicate that absorption wavelength from 2 to 4 μm can be achieved with a strain compensated quantum well structure. The transition wavelength and wave function overlap can be optimized by properly selecting the thicknesses and composition of the quantum well layers.

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Authors and Affiliations

  1. Department of Electrical and Computer Engineering, University of Virginia, Charlottesville, VA, 22904-4743, USA

    Baile Chen, W. Y. Jiang & A. L. Holmes Jr.

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  1. Baile Chen
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  2. W. Y. Jiang
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  3. A. L. Holmes Jr.
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Correspondence to Baile Chen.

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Chen, B., Jiang, W.Y. & Holmes, A.L. Design of strain compensated InGaAs/GaAsSb type-II quantum well structures for mid-infrared photodiodes. Opt Quant Electron 44, 103–109 (2012). https://doi.org/10.1007/s11082-011-9524-1

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  • DOI: https://doi.org/10.1007/s11082-011-9524-1

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