Skip to main content
Log in

A flexible, plane-wave based multiband \({\mathbf{k}\cdot\mathbf{p}}\) model

  • Published:
Optical and Quantum Electronics Aims and scope Submit manuscript

Abstract

In this work, we present a highly generalized implementation of multiband \({\mathbf{k}\cdot\mathbf{p}}\) models. We have achieved a high efficiency of our approach by incorporating it in a plane-wave framework within the Density Functional Theory package S/PHI/nX. To demonstrate the flexibility and applicability of our code, we have chosen two example studies that are directly accessible with the standard eight-band \({\mathbf{k}\cdot\mathbf{p}}\) model. By employing a 14-band \({\mathbf{k}\cdot\mathbf{p}}\) model for the description of pyramidal InAs/GaAs quantum dots (QDs), we show that this model is able to accomodate for the correct symmetry of the underlying zincblende lattice, which is not reflected in the standard eight-band model. Our second example provides a description of site-controlled (111)-oriented InGaAs/GaAs QDs. The extremely small aspect ratio of these QDs makes a description using conventional \({\mathbf{k}\cdot\mathbf{p}}\) Hamiltonians computationally highly expensive. We have therefore rotated the standard eight-band Hamiltonian, to suit the description of these systems. The studies of electronic properties of the above mentioned model systems demonstrate the efficiency and flexibility of our approach.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Similar content being viewed by others

References

  • Bahder T.: Eight-band \({\mathbf{k}\cdot\mathbf{p}}\) model of strained zinc-blende crystals. Phys. Rev. B 41, 11992–12001 (1990)

    Article  ADS  Google Scholar 

  • Baer N., Schulz S., Gartner P., Schumacher S., Czycholl G., Jahnke F.: Influence of symmetry and Coulomb correlation effects on the optical properties of nitride quantum dots. Phys. Rev. B 76, 075310–075323 (2007)

    Article  ADS  Google Scholar 

  • Bester G., Zunger A.: Cylindrically shaped zinc-blende semiconductor quantum dots do not have cylindrical symmetry: atomistic symmetry, atomic relaxation, and piezoelectric effects. Phys. Rev. B 71, 045318–045329 (2005)

    Article  ADS  Google Scholar 

  • Boeck S., Freysoldt C., Dick A., Ismer L., Neugebauer J.: The object-oriented DFT program library S/PHI/nX. Comput. Phys. Commun. 182, 543–554 (2011)

    Article  ADS  Google Scholar 

  • Daudin B.: Polar and nonpolar quantum dots. J. Phys. Condens. Matter 20, 473201–473215 (2008)

    Article  ADS  Google Scholar 

  • Fonoberov V.A., Balandin A.A.: Excitonic properties of strained wurtzite and zinc-blende GaN/Al x Ga1-x N quantum dots. J. Appl. Phys. 94, 7178–7186 (2003)

    Article  ADS  Google Scholar 

  • Hermann C., Weisbuch C.: \({\mathbf{k}\cdot\mathbf{p}}\) perturbation theory in III-V compounds and alloys: a reexamination. Phys. Rev. B 15, 823–833 (1977)

    Article  ADS  Google Scholar 

  • Healy S.B., Young R.J., Mereni L.O., Dimastrodonato V., Pelucchi E., O’Reilly E.P.: Physics of novel site controlled InGaAs quantum dots on (111) oriented substrates. Physica E 42, 2761–2764 (2009)

    Article  ADS  Google Scholar 

  • Jancu J.M., Scholz R., De Andrada e Silva E.A., La Rocca G.C.: Atomistic spin-orbit coupling and \({\mathbf{k}\cdot\mathbf{p}}\) parameters in III-V semiconductors. Phys. Rev. B 72, 193201–193204 (2005)

    Article  ADS  Google Scholar 

  • Marquardt O., Gambaryan K.M., Hickel T., Aroutiounian V.M., Neugebauer J.: Growth process, characterization, and modeling of electronic properties of coupled InAsSbP nanostructures. J. Appl. Phys. 110, 043708–043713 (2011)

    Article  ADS  Google Scholar 

  • Marquardt O., Boeck S., Freysoldt C., Hickel T., Neugebauer J.: Plane-wave implementation of the real-space k · p formalism and continuum elasticity theory. Comput. Phys. Commun. 181, 765–771 (2010)

    Article  MathSciNet  ADS  Google Scholar 

  • Marquardt, O., Freysoldt, C., Boeck, S., Hickel, T., Neugebauer, J.: to be submitted

  • Marquardt O., Mourad D., Schulz S., Hickel T., Czycholl G., Neugebauer J.: Comparison of atomistic and continuum theoretical approaches to determine electronic properties of GaN/AlN quantum dots. Phys. Rev. B 78, 235302–235310 (2008)

    Article  ADS  Google Scholar 

  • Marquardt, O., O’Reilly, E.P., Schulz, S.: to be submitted

  • Mereni L.O., Dimastrodonato V., Young R.J., Pelucchi E.: A site-controlled quantum dot system offering both high uniformity and spectral purity. Appl. Phys. Lett. 94, 223121–223123 (2009)

    Article  ADS  Google Scholar 

  • Pfeffer P., Zawadzki W.: Five-level \({\mathbf{k}\cdot\mathbf{p}}\) model for the conduction and valence bands of GaAs and InP. Phys. Rev. B 53, 12813–12828 (1996)

    Article  ADS  Google Scholar 

  • Pelucchi E., Watanabe S., Leifer K., Zhu Q., Dwir B., Rios P., Kapon E.: Mechanisms of quantum dot energy engineering by metalorganic vapor phase epitaxy on patterned nonplanar substrates. Nano Lett. 7, 1282–1285 (2007)

    Article  ADS  Google Scholar 

  • Pryor C.: Eight-band calculations of strained InAs/GaAs quantum dots compared with one-, four-, and six-band approximations. Phys. Rev. B 57, 7190–7195 (1998)

    Article  ADS  Google Scholar 

  • Schliwa A., Winkelnkemper M., Bimberg D.: Impact of size, shape, and composition on piezoelectric effects and electronic properties of In(Ga)As/GaAs quantum dots. Phys. Rev. B 76, 205324–205340 (2007)

    Article  ADS  Google Scholar 

  • Schulz S., Caro M.A., O’Reilly E.P., Marquardt O.: Symmetry-adapted calculations of strain and polarization fields in (111)-oriented zinc-blende quantum dots. Phys. Rev. B 84, 125312–125325 (2011)

    Article  ADS  Google Scholar 

  • Stier, O.: Electronic Properties of Quantum Dots and Wires, Berlin (2000)

  • Stier O., Grundmann M., Bimberg D.: Electronic and optical properties of strained quantum dots modeled by 8-band \({\mathbf{k}\cdot\mathbf{p}}\) theory. Phys. Rev. B 59, 5688–5701 (1999)

    Article  ADS  Google Scholar 

  • Stock E., Warming T., Ostapenko I., Rodt S., Schliwa A., Tofflinger J.A., Lochmann A., Toropov A.I., Moshchenko S.A., Dmitriev D.V., Haisler V.A., Bimberg D.: Single-photon emission from InGaAs quantum dots grown on (111) GaAs. Appl. Phys. Lett. 96, 093112–093114 (2010)

    Article  ADS  Google Scholar 

  • Zhao Q., Mei T.: J. Appl. Phys. 109, 063101–063113 (2011)

    Article  ADS  Google Scholar 

  • Zhu Q., Karlsson K.F., Pelucchi E., Kapon E.: Transition from two-dimensional to three-dimensional quantum confinement in semiconductor quantum wires/quantum dots. Nano Lett. 7, 2227–2233 (2007)

    Article  ADS  Google Scholar 

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to Oliver Marquardt.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Marquardt, O., Schulz, S., Freysoldt, C. et al. A flexible, plane-wave based multiband \({\mathbf{k}\cdot\mathbf{p}}\) model. Opt Quant Electron 44, 183–188 (2012). https://doi.org/10.1007/s11082-011-9506-3

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1007/s11082-011-9506-3

Keywords

Navigation