Abstract
Energy transport in silicon-aluminum thin films is examined during the laser short-pulse irradiation subjected to the silicon film. The silicon film is considered to be at the top of the aluminum film. Thermal boundary resistance at the interface of the films is incorporated in the analysis. The absorption of laser radiation in the silicon and aluminum films is modeled using the transfer matrix method. Since the silicon film is dielectric, the phonon radiative transport basing the Boltzmann transport equation is incorporated to determine equivalent equilibrium temperature in the film while modified two-equation model is used to account for the non-equilibrium energy transport due to thermal separation of electron and phonon sub-systems in the aluminum film during the laser short-pulse heating process.
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Mansoor, S.B., Yilbas, B.S. Laser short-pulse heating of silicon-aluminum thin films. Opt Quant Electron 42, 601–618 (2011). https://doi.org/10.1007/s11082-011-9482-7
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DOI: https://doi.org/10.1007/s11082-011-9482-7