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Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect

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Abstract

The Authors report an analytical model to investigate optoelectronic characteristics reliance of a Transistor Laser on Quantum Well Location. Using simulated base recombination lifetime, optical frequency response for different quantum-well locations extracted. Slipping the well towards the collector, improves the optical bandwidth where a maximum of ≈54 GHz is observed. No resonance peak, limiting factor in diode lasers, is occurred in this enhancement method. Analyzing current gain (β) as a function of the quantum well location, exhibits a decrease in β when the well moved in the direction of the collector so that a trade-off between optical and electrical properties of transistor laser is evident. The trade-off is utilized in conjunction with previously reported experimental researches to find an optimum place of quantum well for desired performance.

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Authors and Affiliations

  1. Photonics Research Laboratory (PRL), Electrical Engineering Department, AmirKabir University of Technology, Hafez avenue #424, 15914, Tehran, Iran

    Iman Taghavi & Hassan Kaatuzian

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  1. Iman Taghavi
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  2. Hassan Kaatuzian
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Correspondence to Iman Taghavi.

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Taghavi, I., Kaatuzian, H. Gain-bandwidth trade-off in a transistor laser: quantum well dislocation effect. Opt Quant Electron 41, 481–488 (2009). https://doi.org/10.1007/s11082-010-9384-0

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  • DOI: https://doi.org/10.1007/s11082-010-9384-0

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