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Band energy modulation on Cu-doped Sb2S3-based photoelectrodes for charge generation and transfer property of quantum dot–sensitized solar cells

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Abstract

Sb2S3 quantum dot is prepared as the optical absorber on the ZnO nanorod films to fabricate high-efficiency quantum dot–sensitized solar cells. The band energy of the solar cells is modulated by the different concentration of Cu-doping. Meanwhile, the optical absorption spectra and photoluminescence spectra of different ZnO/Sb2S3 photoelectrodes are investigated, which had exhibited the enhancement on optical absorption property and charge separation property by Cu-doping process. The charge transfer properties of the solar cells had also been enhanced by the modulation on band energy structure by different Cu-doping concentration. With the relatively larger optical absorption edge, the 0.3 mM Cu–doped ZnO/Sb2S3 quantum dot–sensitized solar cells have exhibited optimal band energy structure for charge transfer, which can obtain higher current density to enhance the photovoltaic power conversion efficiency from 2.55 to 3.14%.

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Acknowledgments

Thanks for the measurements supporting from Hunan Province 2011 Collaborative Innovation Center of Clean Energy and Smart Grid.

Funding

This work is supported by the National Natural Science Foundation of China (No. 51802028), Natural Science Foundation of Hunan Province, China (Grant No. 2018JJ3527), Changsha Municipal Science and Technology Project (Grant No. kq1901109), the Research Foundation of Education Bureau of Hunan Province (Grant No.17C0025), the Key Scientific Research Project of the Education Department of Hunan Province (Grant No.16A002), and the Key Laboratory of Efficient & Clean Energy Utilization, the Education Department of Hunan Province (Grant No. 2017NGQ007).

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Correspondence to Zhuoyin Peng.

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Sun, Z., Peng, Z., Liu, Z. et al. Band energy modulation on Cu-doped Sb2S3-based photoelectrodes for charge generation and transfer property of quantum dot–sensitized solar cells. J Nanopart Res 22, 282 (2020). https://doi.org/10.1007/s11051-020-05009-z

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  • DOI: https://doi.org/10.1007/s11051-020-05009-z

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