Abstract
β-Bi2O3/g-C3N4 nanosheet (NS) p–n junction of g-C3N4 NS-wrapped β-Bi2O3 was fabricated via self-assembly process by electrostatic force. By the analyses of scanning electron microscopy images and Fourier transform infrared spectra, the g-C3N4 NS has been wrapped on the spherical β-Bi2O3 particles. Constructing p–n junction with g-C3N4 NS can enhance the separation efficiency of photogenerated carriers and light absorption ability of β-Bi2O3 particles obtained by the characterization of fluorescence spectra and diffuse reflectance spectra. The photocatalytic removal rate of RhB is largely enhanced by construction of β-Bi2O3/g-C3N4 NS p–n junctions. The photocatalytic ability of β-Bi2O3/g-C3N4 NS p–n junctions can be adjusted by tuning the loading amount of g-C3N4 NS. The enhanced photocatalytic performance is firstly attributed to the p–n junction effect of efficient separation of photogenerated charge carriers. Furthermore, the increased light absorbance of the composites also contributes to the enhanced photocatalytic ability.
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This work was supported by the National Science Fund China (project no. 21107007) and Cultivation Program for Excellent Talents of Science and Technology Department of Liaoning Province (No. 2014026009).
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Dang, X., Zhang, X., Chen, Y. et al. Preparation of β-Bi2O3/g-C3N4 nanosheet p–n junction for enhanced photocatalytic ability under visible light illumination. J Nanopart Res 17, 93 (2015). https://doi.org/10.1007/s11051-014-2808-1
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DOI: https://doi.org/10.1007/s11051-014-2808-1