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Trench-template fabrication of indium and silicon nanowires prepared by thermal evaporation process

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Abstract

In this study, we report on the trench-template assisted fabrication of nanowires for thermally evaporated indium and silicon thin films on quartz substrate. Length of the nanowires is completely dependent on the length of the trench, whereas the diameter of the nanowires is dependent on the thickness of the thin film. The diameter of nanowire increases from 200 nm to 1 μm when the thickness was increased from 15 to 60 nm. It is observed that nanowires diameter is invariably controlled by material deposition thickness. Average crystallite sizes for 60 nm indium and silicon deposition inside the trench are 120 and 35 nm, respectively. Nanowire surface plasmon peak shift as compared to the same thickness untemplated continuous thin film is more for thinner nanowires. This technique of nanowire fabrication is shown to be versatile in nature.

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Acknowledgement

Funding from department of science and technology (DST), government of India is duly acknowledged.

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  1. Jawaharlal Nehru Centre for Advanced Scientific Research (JNCASR), Jakkur P.O., Bangalore, 560064, Karnataka, India

    Prashant Kumar

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  1. Prashant Kumar
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Correspondence to Prashant Kumar.

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Kumar, P. Trench-template fabrication of indium and silicon nanowires prepared by thermal evaporation process. J Nanopart Res 12, 2473–2480 (2010). https://doi.org/10.1007/s11051-009-9813-9

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  • DOI: https://doi.org/10.1007/s11051-009-9813-9

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