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Growth parameters and shape specific synthesis of silicon nanowires by the VLS method

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Abstract

In this paper the effect of varying temperature, pressure and chemical precursors on the vapour–liquid–solid (VLS) growth of silicon nanowires (Si NWs) have been investigated. Some aspects of nucleation and growth mechanisms are discussed. Control on Si NW morphology by varying the choice of gaseous precursor (silane or dichlorosilane) at elevated temperatures is reported.

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Acknowledgments

This research was supported by the European project Hydromel NMP2-CT-2006-026622. The authors would like to acknowledge Dr Alan O’Riordan, Pascal Faucherand and Severine Poncet for their help.

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Authors and Affiliations

  1. CEA-Grenoble, LITEN/DTNM/LCH, 17, rue des Martyrs, 38054, Grenoble Cedex 9, France

    Laurence Latu-Romain, Celine Mouchet, Emmanuelle Rouviere & Jean-Pierre Simonato

  2. CEA-Grenoble, LITEN/DTH/Grenoble Electron Microscopy-Minatec, 17, rue des Martyrs, 38054, Grenoble Cedex 9, France

    Cyril Cayron

Authors
  1. Laurence Latu-Romain
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  2. Celine Mouchet
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  3. Cyril Cayron
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  4. Emmanuelle Rouviere
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  5. Jean-Pierre Simonato
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Correspondence to Jean-Pierre Simonato.

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Latu-Romain, L., Mouchet, C., Cayron, C. et al. Growth parameters and shape specific synthesis of silicon nanowires by the VLS method. J Nanopart Res 10, 1287–1291 (2008). https://doi.org/10.1007/s11051-007-9350-3

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  • DOI: https://doi.org/10.1007/s11051-007-9350-3

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