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Rare earth Eu3+ co-doped AZO thin films prepared by nebulizer spray pyrolysis technique for optoelectronics

  • Original Paper: Functional coatings, thin films and membranes (including deposition techniques)
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Abstract

Rare earth element (i.e.) europium co-doped aluminum zinc oxide (Eu:AZO) thin films were deposited on microscope glass slides by nebulizer spray pyrolysis with different Eu-doping concentrations (0, 0.5, 1, and 1.5%). The deposited films were investigated using X-ray diffraction, AFM, EDAX, FT-Raman, UV–visible, PL, and Hall effect measurements. X-ray confirmed the incorporation of aluminum and europium ions into the ZnO structure. All films have polycrystalline nature with hexagonal wurtzite structure at (002) direction. Topological depictions exhibited minimum surface roughness and low film thickness for pristine AZO thin film. EDAX study authorizes the existence of Zn, O, Al, and Eu in Eu: AZO thin films. Raman spectra exhibited the characteristic of ZnO-wurtzite structure (E2-high) mode at 447 cm−1. The deposited film showed high optical transmittance of ~90% in visible region, and the direct energy gap was around 3.30 eV for pristine AZO thin film. The PL spectra emitted a powerful UV emission situated at 388 nm, and it indicates that the film has good optical quality. The obtained large carrier concentration and less resistivity values are 4.42 × 1021 cm−3 and 3.95 × 10−4 Ω cm, respectively, for 1.5% Eu-doped AZO thin film. The calculated figure of merit value is 17.29 × 10−3 (Ω/sq)−1, which is more suitable for the optoelectronic device.

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Acknowledgements

MS and HA extend their appreciation to the Deanship of Scientific Research at King Khalid University for funding this work through Research Groups Program under Grant No. R.G.P. 2/37/39.

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Correspondence to Mohd Shkir or S. AlFaify.

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Highlights

  • First time Eu3+ co-doped AZO thin films were deposited through by the nebulizer spray pyrolysis.

  • Structural and vibrational analysis confirms the phase and the good crystalline nature.

  • All films are of high optical transparency, and confirms their use in optoelectronics.

  • Optical band gap is found in the range of 3.26–3.30 eV.

  • Film with 1.5% Eu possess high-carrier concentration [34.42 × 1021 cm−3] and low resistivity [3.95 × 10−4 Ω cm].

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Anand, V., Sakthivelu, A., Kumar, K.D.A. et al. Rare earth Eu3+ co-doped AZO thin films prepared by nebulizer spray pyrolysis technique for optoelectronics. J Sol-Gel Sci Technol 86, 293–304 (2018). https://doi.org/10.1007/s10971-018-4646-6

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  • DOI: https://doi.org/10.1007/s10971-018-4646-6

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