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Frequency dependent ferroelectric and electrical properties of (Ho, Ni) co-doped BiFeO3 thin films

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Abstract

We have evaluated the ferroelectric and electrical properties of pure BiFeO3 (BFO) and (Bi0.9Ho0.1)(Fe1−xNix)O3−δ (BHFNxO, x = 0.01, 0.02, and 0.03) thin films as frequency varying from 1 to 50 kHz on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. With the frequency from 1 to 10 kHz, the decrease of remnant polarization (2P r ) of the BHFN0.02O thin film was about 27 %, from 26 to 19 μC/cm2, which is one half lower than those of the BHFNxO (x = 0.01 and 0.03) thin films. Otherwise, the variation of the coercive electric field (2E c ) was relatively small, which were 16, 11 and 3 % for the BHFNxO (x = 0.01, 0.02, and 0.03) thin films. The remnant polarization (2P r ) and the coercive electric field (2E c ) values of the BHFN0.02O thin film show the dependence of measurement frequency and it has been fairly saturated about 30 kHz. Also, the leakage current density of the co-doped BHFN0.02O thin film showed three orders lower than that of the pure BFO, 2.14 × 10−6 Å/cm2 at 100 kV/cm.

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Acknowledgments

This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).

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Correspondence to S. S. Kim.

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Kim, Y.J., Kim, J.W. & Kim, S.S. Frequency dependent ferroelectric and electrical properties of (Ho, Ni) co-doped BiFeO3 thin films. J Sol-Gel Sci Technol 66, 38–42 (2013). https://doi.org/10.1007/s10971-013-2963-3

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  • DOI: https://doi.org/10.1007/s10971-013-2963-3

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