Abstract
We have evaluated the ferroelectric and electrical properties of pure BiFeO3 (BFO) and (Bi0.9Ho0.1)(Fe1−xNix)O3−δ (BHFNxO, x = 0.01, 0.02, and 0.03) thin films as frequency varying from 1 to 50 kHz on Pt(111)/Ti/SiO2/Si(100) substrates by using a chemical solution deposition method. With the frequency from 1 to 10 kHz, the decrease of remnant polarization (2P r ) of the BHFN0.02O thin film was about 27 %, from 26 to 19 μC/cm2, which is one half lower than those of the BHFNxO (x = 0.01 and 0.03) thin films. Otherwise, the variation of the coercive electric field (2E c ) was relatively small, which were 16, 11 and 3 % for the BHFNxO (x = 0.01, 0.02, and 0.03) thin films. The remnant polarization (2P r ) and the coercive electric field (2E c ) values of the BHFN0.02O thin film show the dependence of measurement frequency and it has been fairly saturated about 30 kHz. Also, the leakage current density of the co-doped BHFN0.02O thin film showed three orders lower than that of the pure BFO, 2.14 × 10−6 Å/cm2 at 100 kV/cm.
Similar content being viewed by others
References
Prellier W, Singh MP, Murugavel P (2005) The single-phase multiferroic oxides: from bulk to thin film. J Phys Condens Matter 17:R803–R832
Selbach SM, Tybell T, Einarsrud M, Grande T (2008) The ferroic phase transistions of BiFeO3. Adv Mater 20:3692–3696
Zhao T, Scholl A, Zavaliche F, Lee K, Barry M, Doran A, Cruz MP, Chu YH, Ederer C, Spaldin NA, Das RR, Kim DM, Baek SH, Eom CB, Ramesh R (2006) Electrical control of antiferromagnetic domains in multiferroic BiFeO3 films at room temperature. Nat Mater 5:823–829
Martin LW, Chu YH, Ramesh R (2010) Advances in the growth and characterization of magnetic, ferroelectric, and multiferroic oxide thin films. Mater Sci Eng R 68:89–113
Yu BF, Li MY, Wang J, Pei L, Guo DY, Zhao XZ (2008) Enhanced electrical properties in multiferroic BiFeO3 ceramics co-doped by La3+ and V5+. J Phys D Appl Phys 41:185401–185405
Kawae T, Tsuda H, Naganuma H, Yamada S, Kumeda M, Okamura S, Morimoto A (2008) Composition dependence in BiFeO3 film capacitor with suppressed leakage current by Nd and Mn cosubstitution and their ferroelectric properties. Jpn J Appl Phys 47:7586–7589
Pradhan DK, Choudhary RNP, Rinaldi C, Katiyar RS (2009) Effect of Mn substitution on electrical and magnetic properties of Bi0.9La0.1FeO3. J Appl Phys 106:024102
Hu ZQ, Li MY, Yu BF, Pei L, Liu J, Wang J, Zhao XZ (2009) Enhanced multiferroic properties of BiFeO3 thin films by Nd and high-valence Mo co-doping. J Phys D Appl Phys 42:185010–185014
Yu BF, Li MY, Liu J, Guo DY, Pei L, Zaho X (2008) Effects of ion doping at different sites on electrical properties of multiferroic BiFeO3 ceramics. J Phys D Appl Phys 41:065003–065006
Qi X, Dho J, Tomov R, Blamire MG, MacManus-Dricoll JL (2005) Greatly reduced leakage current and conduction mechanism in aliovalention doped BiFeO3. Appl Phys Lett 86:062903
Singh K, Palai R, Maruyama K, Ishiwara H (2008) Effects of Ni substitution on structural, dielectrical, and ferroelectric properties of chemical-solution-deposited multiferroic BiFeO3 films dielectric science and materials. Electrochem Solid-State Lett 11:G30–G32
Shannon RD (1975) Revised effective ionic radii and systematic studies of interatomic distances in halides and chalcogenides. Acta Cryst A32:751–767
Vrejoiu I, Rhun GL, Pintilie L, Hesse D, Alexe M, Gösele U (2006) Intrinsic ferroelectric properties of strained tetragonal PbZr0.2Ti0.8O3 obtained on layer-by-layer grown defect-free single-crystalline films. Adv Mater 18:1657–1661
Jeon N, Rout D, Kim IW, Kang SJL (2011) Enhanced multiferroic properties of single-phase BiFeO3 bulk ceramics by Ho doping. Appl Phys Lett 98:072901
Singh SK, Maruyama K, Ishiwara H (2007) Reduced leakage current in La and Ni codoped BiFeO3 thin films. Appl Phys Lett 9:112913
Singh SK, Ishiwara H, Sato K, Maruyama K (2007) Microstructure and frequency dependent electrical properties of Mn-substituted BiFeO3 thin films. J Appl Phys 102:094109
Hu GD, Cheng X, Wu WB, Yang CH (2007) Effects of Gd substitution on structure and ferroelectric properties of BiFeO3 thin films prepared using metal organic decomposition. Appl Phys Lett 91:232909
Acknowledgments
This work was supported by Priority Research Centers Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (2010-0029634).
Author information
Authors and Affiliations
Corresponding author
Rights and permissions
About this article
Cite this article
Kim, Y.J., Kim, J.W. & Kim, S.S. Frequency dependent ferroelectric and electrical properties of (Ho, Ni) co-doped BiFeO3 thin films. J Sol-Gel Sci Technol 66, 38–42 (2013). https://doi.org/10.1007/s10971-013-2963-3
Received:
Accepted:
Published:
Issue Date:
DOI: https://doi.org/10.1007/s10971-013-2963-3