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The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol–gel method

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Abstract

In this study, the forward bias current–voltage (I–V) and capacitance–voltage (C–V) characteristics of the Al/TiO2/p-Si (MIS) structures derived using the sol–gel method have been investigated and compared at various preparation temperatures. Experimental results show that the preparation temperatures strongly affect the electrical characteristics, such as ideality factor (n), zero-bias barrier height (\( \phi_{b0} \)), series resistance (R s ) and interface states (N ss ). The MIS structures show non-ideal behavior of I–V characteristics with an n varying between 2.17 and 4.61. We have found that the \( \phi_{b0} \) and R s increase as the n decrease with increasing preparation temperature. The energy distribution profile of N ss of the Al/TiO2/p-Si (MIS) structures was obtained from the forward bias I–V characteristics by taking into account both the bias dependence of the effective barrier height (\( \phi_{e} \)) and R s for various preparation temperatures. The values of N ss increase from the midgap towards the top of valance band for various preparation temperatures.

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Acknowledgment

This work was supported by Ankara University (BIYEP) Project number 2005-K–120-140-8 and Ankara University Scientific Research Project (BAP), 2007-07-45-054.

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Authors and Affiliations

  1. Department of Engineering Physics, Faculty of Engineering, Ankara University, Tandogan, 06100, Ankara, Turkey

    O. Pakma, N. Serin & T. Serin

  2. Department of Physics, Faculty of Arts and Sciences, University of Muğla, Muğla, 48000, Turkey

    O. Pakma

  3. Department of Physics, Faculty of Arts and Sciences, Gazi University, Teknikokullar, 06500, Ankara, Turkey

    Ş. Altındal

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  1. O. Pakma
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  2. N. Serin
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Correspondence to O. Pakma.

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Pakma, O., Serin, N., Serin, T. et al. The effects of preparation temperature on the main electrical parameters of Al/TiO2/p-Si (MIS) structures by using sol–gel method. J Sol-Gel Sci Technol 50, 28–34 (2009). https://doi.org/10.1007/s10971-009-1895-4

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