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Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35)TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates

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Abstract

Highly (110)-oriented Ba0.65Sr0.35TiO3 films were deposited on Pt/LaNiO3/SiO2/Si substrates by a sol–gel method. It was found that the (110)-preferred Pt film was very effective for growing (110)-oriented ferroelectric films with perovskite structure. The as-grown Ba0.65Sr0.35TiO3 films showed good dielectric properties with dielectric constant \( \varepsilon_{33}^{T} /\varepsilon_{0} = 1750 \) and loss tangent tan δ = 0.026. Excellent dielectric tunability was also achieved in the (110)-oriented films. With applying an electric field of 230 kV/cm at 100 kHz, the dielectric tunability and the figure of merit can reach up to 63.4% and 16, respectively. These results indicate that the highly (110)-oriented Ba0.65Sr0.35TiO3 film is a promising candidate for the applications in microwave tunable devices.

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References

  1. Zhang T, Ni H (2002) Sens. Actuator A 100:252

    Google Scholar 

  2. Liu S, Liu M, Zeng Y, Li C, Chen S, Huang Y, Xia D (2002) Mater Sci Eng C 22:73

    Article  Google Scholar 

  3. Chen CL, Shen J, Shen SY, Luo GP, Chu CW, Miranda FA, Keuls FWV, Jiang JC, Meletis EI, Chang HY (2001) Appl Phys Lett 78:652

    Article  ADS  CAS  Google Scholar 

  4. Im J, Auciello O, Baumann PK, Streiffer SK, Kaufman DY, Krauss AR (2000) Appl Phys Lett 76:625

    Article  ADS  CAS  Google Scholar 

  5. Kim H-S, Hyun T-S, Kim H-G, Kim I-D, Yun T-S, Lee J-C (2006) Appl Phys Lett 89:052902

    Article  ADS  CAS  Google Scholar 

  6. Moon SE, Kim E-K, Kwak M-H, Ryu H-C, Kim Y-T, Kang K-Y, Lee S-J, Kim W-J (2003) Appl Phys Lett 83:2166

    Article  ADS  CAS  Google Scholar 

  7. Carlson CM, Rivkin TV, Parilla PA, Perkins JD, Ginley DS, Kozyrev AB, Oshadchy VN, Pavlov AS (2000) Appl Phys Lett 76:1920

    Article  ADS  CAS  Google Scholar 

  8. Yang H, Chen B, Tao K, Qiu X, Xu B, Zhao B (2003) Appl Phys Lett 83:1611

    Article  ADS  CAS  Google Scholar 

  9. Zhu W, Cheng J, Yu S, Gong J, Meng Z (2007) Appl Phys Lett 90:032907

    Article  ADS  CAS  Google Scholar 

  10. Yamada T, Sherman AVO, Nöth A, Muralt P, Tagantsev AK, Setter N (2006) Appl Phys Lett 89:032905

    Article  ADS  CAS  Google Scholar 

  11. Yoon KH, Sohn J-H, Lee BD, Kang DH (2001) Appl Phys Lett 81:5012

    Article  ADS  CAS  Google Scholar 

  12. Guo Y, Akai D, Sawada K, Ishida M (2007) Appl Phys Lett 90:232908

    Article  ADS  CAS  Google Scholar 

  13. Guo Y, Suzuki K, Nishizawa K, Miki T, Kato K (2006) Adv Mater Res 11–12:101

    Article  Google Scholar 

  14. Hoffmann S, Waser R (1999) J Eur Ceram 19:1339

    Article  CAS  Google Scholar 

  15. Fukuda Y, Haneda H, Sakaguchi I (1997) Jpn J Appl Phys 36:1514

    Article  ADS  Google Scholar 

  16. Wang J, Zhang T, Xiang J, Zhang B (2008) Mater Chem Phys 108:445

    Article  CAS  Google Scholar 

  17. Wu ChG, Zhang WL, Li YR, Liu XZh, Zhu J, Tao BW (2006) Infrared Phys Technol 48:187

    Article  ADS  CAS  Google Scholar 

  18. Guo Y, Suzuki K, Nishizawa K, Miki T, Kato K (2005) J Cryst Growth 284:190

    Article  ADS  CAS  Google Scholar 

  19. Zafar S, Jones RE, Jiang B, White B, Kaushik V, Gillespie S (1998) Appl Phys Lett 73:3533

    Article  ADS  CAS  Google Scholar 

  20. Shin JC, Park J, Hwang CS, Kim HJ (1999) J Appl Phys 86:506

    Article  ADS  CAS  Google Scholar 

  21. Dietz GW, Schumacher M, Waser R, Streiffer SK, Basceri C, Kingon AI (1999) J Appl Phys 82:2359

    Article  ADS  Google Scholar 

  22. Maruno S, Kuroiwa T, Mikami N, Sato K, Ohmura S, Kaida M, Yasue T, Koshikawa T (1998) Appl Phys Lett 73:954

    Article  ADS  CAS  Google Scholar 

  23. Watanabe K, Hartmann AJ, Lamb RN, Scott JF (1998) J Appl Phys 84:2170

    Article  ADS  CAS  Google Scholar 

Download references

Acknowledgement

This work was supported by the Pujiang scholar foundation of Shanghai (No. 08PJ14071).

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Authors and Affiliations

  1. State Key Laboratory of MMCs, Shanghai Jiaotong University, Shanghai, 200030, China

    Yiping Guo & Mingyuan Gu

  2. Venture Business Laboratory, Toyohashi University of Technology, 1-1 Tempaku-cho, Toyohashi, Japan

    Daisuke Akai

  3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibarigaoka, Tempaku-cho, Toyohashi, 441-8580, Japan

    Kazuaki Sawada & Makoto Ishida

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  1. Yiping Guo
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  2. Daisuke Akai
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  3. Kazuaki Sawada
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  4. Makoto Ishida
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  5. Mingyuan Gu
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Correspondence to Yiping Guo.

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Guo, Y., Akai, D., Sawada, K. et al. Dielectric and tunable properties of highly (110)-oriented (Ba0.65Sr0.35)TiO3 thin films deposited on Pt/LaNiO3/SiO2/Si substrates. J Sol-Gel Sci Technol 49, 66–70 (2009). https://doi.org/10.1007/s10971-008-1831-z

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  • DOI: https://doi.org/10.1007/s10971-008-1831-z

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