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Dielectric Characteristics of Sol-Gel-Derived BST/BSLaT/BST Multilayer

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Abstract

BST/BSLaT/BST multiplayer (ML) films were prepared by sol-gel method on the Pt/Ti/SiO2/Si substrate. X-ray diffraction analysis and atomic force microscopy showed that dopant La causes decreased grain size of BST thin films obviously, and ML films were similar to BST films in size. The dielectric constant versus temperature curve of ML films becomes sharper comparing with that of BST films near the phase transition point, which indicated that the pyroelectric coefficient is propitious to be enhanced. The ML films also improve the leakage current characteristics of BST thin films and the linear relationship of the log J versus E1/2 curves shows in a good agreement with the Schottky thermionic emission model. This work clearly reveals the highly promising potential of BST/BSLaT/BST multiplayer films compared with BST films for application in uncooled infrared focal plane arrays system.

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Authors and Affiliations

  1. School of Micro-Electronics and Solid-State Electronics, University of Electronic Science and Technology of China, Chengdu, 610054, People's Republic of China

    Wencheng Hu, Chuanren Yang, Wanli Zhang & Yan Qiu

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  1. Wencheng Hu
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  2. Chuanren Yang
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  3. Wanli Zhang
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  4. Yan Qiu
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Correspondence to Wencheng Hu.

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Hu, W., Yang, C., Zhang, W. et al. Dielectric Characteristics of Sol-Gel-Derived BST/BSLaT/BST Multilayer. J Sol-Gel Sci Technol 36, 249–255 (2005). https://doi.org/10.1007/s10971-005-4511-2

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  • DOI: https://doi.org/10.1007/s10971-005-4511-2

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